Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures
Zhongqiang Hu,Xinjun Wang,Tianxiang Nan,Ziyao Zhou,Beihai Ma,Xiaoqin Chen,John G. Jones,Brandon M. Howe,Gail J. Brown,Yuan Gao,Hwaider Lin,Zhiguang Wang,Rongdi Guo,Shuiyuan Chen,Xiaoling Shi,Wei Shi,Hongzhi Sun,David Budil,Ming Liu,Nian X. Sun
DOI: https://doi.org/10.1038/srep32408
IF: 4.6
2016-01-01
Scientific Reports
Abstract:Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors and tunable radio frequency (RF)/microwave devices.