Manipulating The Magnetism And Resistance State Of Mn:Zno/Pb(Zr0.52ti0.48)O-3 Heterostructured Films Through Electric Fields

Yong-Chao Li,Jun Wu,Hai-Yang Pan,Jue Wang,Guang-Hou Wang,Jun-Ming Liu,Jian-Guo Wan
DOI: https://doi.org/10.1063/1.5025198
IF: 4
2018-01-01
Applied Physics Letters
Abstract:Mn:ZnO/Pb(Zr0.52Ti0.48)O-3 (PZT) heterostructured films have been prepared on Pt/Ti/SiO2/Si wafers by a sol-gel process. Nonvolatile and reversible manipulation of the magnetism and resistance by electric fields has been realized. Compared with the saturation magnetic moment (M-s) in the +3.0V case, the modulation gain of M-s can reach 270% in the -3.0V case at room temperature. The resistance change is attributed to the interfacial potential barrier height variation and the formation of an accumulation (or depletion) layer at the Mn:ZnO/PZT interface, which can be regulated by the ferroelectric polarization direction. The magnetism of Mn:ZnO originates from bound magnetic polarons. The mobile carrier variation in Mn:ZnO, owing to interfacial polarization coupling and the ferroelectric field effect, enables the electric manipulation of the magnetism in the Mn:ZnO/PZT heterostructured films. This work presents an effective method for modulating the magnetism of magnetic semiconductors and provides a promising avenue for multifunctional devices with both electric and magnetic functionalities. Published by AIP Publishing.
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