Electric Field Modification of Magnetism in Au/La2/3Ba1/3MnO3/Pt Device.

Y. Q. Xiong,W. P. Zhou,Q. Li,Q. Q. Cao,T. Tang,D. H. Wang,Y. W. Du
DOI: https://doi.org/10.1038/srep12766
IF: 4.6
2015-01-01
Scientific Reports
Abstract:The La2/3Ba1/3MnO3 film is deposited in a CMOS-compatible Pt/Ti/SiO2/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La2/3Ba1/3MnO3/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn3+-O2−-Mn4+- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La2/3Ba1/3MnO3/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.
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