In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure

Qi Guo,Xiaoguang Xu,Fang Wang,Yunhao Lu,Jikun Chen,Yanjun Wu,Kangkang Meng,Yong Wu,Jun Miao,Yong Jiang
DOI: https://doi.org/10.1088/1361-6528/aab5fb
IF: 3.5
2018-06-01
Nanotechnology
Abstract:We report the in-plane electric field controlled ferromagnetism of La2/3Sr1/3MnO3 (LSMO) films epitaxially deposited on [Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H c∥) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H c∥ is consistent with the Stoner-Wohlfarth model and first principle calculation with the electric field varying from -10 to 10 kV cm-1. Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.
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