Electric field control of magnetism through modulating phase separation in (011)-Nd 0.5 Sr 0.5 MnO 3 /PMN-PT heterostructures

Yao Liu,Zhitong Xu,Kaiming Qiao,Feiran Shen,Andong Xiao,Jing Wang,Tianyu Ma,Fengxia Hu,Baogen Shen

DOI: https://doi.org/10.1039/d1nr00242b

IF: 6.7

2021-01-01

Nanoscale

Abstract:Large and non-volatile electric field control of magnetization has been realized through strain mediation of both ferromagnetic and antiferromagnetic phases in Nd 0.5 Sr 0.5 MnO 3 /PMN-PT multiferroic heterostructures.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to control magnetism by electric field in multiferroic heterostructures, especially by adjusting phase separation to achieve this goal. Specifically, the research focuses on a heterostructure composed of an intermediate - band material Nd\(_{0.5}\)Sr\(_{0.5}\)MnO\(_3\) (NSMO) thin film and a (011) - oriented 0.7Pb(Mg\(_{1/3}\)Nb\(_{2/3}\))O\(_3\)-0.3PbTiO\(_3\) (PMN - PT) single - crystal substrate. The main purpose of the research is to explore how to use electric fields to induce significant and non - volatile magnetization changes in these materials, which may provide a new approach for the development of low - energy - consumption magnetic storage devices.

### Main research contents
1. **Effect of electric field on magnetism**:
- It was found that applying an electric field at room temperature can increase the magnetization intensity of the NSMO thin film in the in - plane [100] and [011] directions.
- At temperatures below 70 K, after the electric field is removed, the magnetization intensity does not return to the initial state, showing a non - volatile memory effect.

2. **Strain mechanism**:
- The electric field induces anisotropic strain in the PMN - PT substrate, and this strain can be transferred to the NSMO thin film through the interface.
- Specifically, the rhombohedral - to - orthorhombic phase transition caused by the electric field results in compressive strain in the in - plane [100] direction and tensile strain in the [011] direction.

3. **Phase separation regulation**:
- This anisotropic strain can dynamically adjust the balance between the ferromagnetic (FM) and charge - orbital - ordered antiferromagnetic (COO AFM) phases in the NSMO thin film.
- The non - volatile memory effect can be attributed to the competition between thermal energy and the energy barrier between the FM and COO AFM phases at low temperatures.

### Experimental methods
- **Thin film preparation**: NSMO thin films were prepared on commercial (011) - oriented PMN - PT substrates using pulsed - laser - deposition technology.
- **Structural characterization**: The structure and interface of the thin films were characterized by transmission electron microscopy (TEM), high - resolution transmission electron microscopy (HR - TEM) and selected - area electron diffraction (SAED) techniques.
- **Magnetic measurement**: The magnetization curve was measured using the Quantum Design SQUID - VSM system, and in - situ measurement was carried out under the action of an electric field through a self - made sample holder.

### Results and discussion
- **Magnetization - temperature curve**: The magnetization - temperature curves in zero - field - cooling (ZFC), field - cooling (FC) and field - heating (FH) modes show that the NSMO thin film has an AFM phase at low temperatures and undergoes a first - order phase transition from FM to COO AFM at about 165 K.
- **Electric - field - controlled magnetization change**: After applying an electric field, the magnetization intensity increases significantly during the cooling process and has a sudden change at about 130 K, indicating the regulation of phase separation.
- **Non - volatile memory effect**: After the electric field is removed at 20 K, the magnetization intensity remains at a high level until the temperature rises to about 70 K and then gradually recovers, showing a non - volatile memory effect.

### Significance
- **Theoretical contribution**: This research expands the understanding of electric - field - controlled magnetism, especially the strain - mediated phase - separation - regulated magnetism in intermediate - band manganites.
- **Application prospects**: The non - volatile electric - field - controlled magnetization change provides new ideas for designing new - type low - energy - consumption magnetic storage devices, especially memory devices based on antiferromagnetic materials.

In conclusion, through experimental and theoretical analysis, this paper shows the effective regulation of magnetism by electric fields in the NSMO/PMN - PT heterostructure, providing important scientific basis and technical support for the development of high - performance magnetic storage devices.