Resistive Switching in Tetragonal Tungsten Bronze Sr0.6Ba0.4Nb2O6 Thin Films and Control of Schottky Barrier by Insertion of BiFeO3 Layer
J. P. Cao,Z. L. Lv,H. W. Wang,J. K. Wu,K. Lin,Q. Li,X. Chen,X. H. Li,Q. H. Li,Y. . L. Cao,J. X. Deng,Jun Miao
DOI: https://doi.org/10.1016/j.mtcomm.2023.107337
IF: 3.8
2023-01-01
Materials Today Communications
Abstract:Tetragonal tungsten bronze Sr0.6Ba0.4Nb2O6 (SBNO) has exceptional electro-optical, piezoelectric, and thermoelectric properties. Its potential as an electronic device is, furthermore, also relay on the good insulation and multiple-channels structural. However, the transport behavior in SBNO films remains poorly researched. Here, a Pt/SBNO/LSMO capacitor was prepared using the magnetron sputtering method on STO (001) substrates, and its transport behavior was measured. Interestingly, an ultra-high resistive-switching ratio over 10(3) was obtained in SBNO film. The read voltage when the switch ratio is similar to 10(3) drops from 2 V to 0.5 V by inserting a BFO-layer between the interface of SBNO and LSMO. The findings demonstrate that the interface barrier in SBNO/BFO/LSMO devices between the SBNO and BFO layers is essential for maintaining a high switching ratio at low voltage. As a result, the SBNO/BFO/LSMO demonstrates a method for reducing read voltage and offers an approach for future resistive-switching applications.