Abstract:BiFeO 3 (BFO) has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polarization. However, BFO suffers from a large leakage current, resulting in poor ferroelectric properties. Herein, the sol–gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates, and the effects of the substitution of the elements Co, Cu, Mn ( B -site) and Sm, Eu, La ( A -site) on the crystal structure, ferroelectricity, and leakage current of the BFO-based thin films were investigated. Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films. Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure, while La is biased toward pseudo-tetragonal. Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180° can be realized through the prepared films. The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows: Cu > Co > Mn ( B -site), Sm > La > Eu ( A -site). The current density voltage curves indicated that the order for leakage contribution is as follows: Mn < Cu < Co ( B -site), La < Eu < Sm ( A -site). Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains, and the grain size distribution statistics proved that La element promotes the reduction of grain size, leading to the increase of grain boundaries and the reduction of leakage. Finally, a Bi 0.985 Sm 0.045 La 0.03 Fe 0.96 Co 0.02 Cu 0.02 O 3 (SmLa-CoCu) thin film with a qualitative leap in the remnant polarization from 25.5 (Bi 0.985 Sm 0.075 FeO 3 ) to 98.8 μC/cm 2 (SmLa-CoCu) was prepared through the synergistic action of Sm, La, Co, and Cu elements. The leakage current is also drastically reduced from 160 to 8.4 mA/cm 2 at a field strength of 150 kV/cm. Thus, based on the increasing entropy strategy of chemical engineering, this study focuses on enhancing ferroelectricity and decreasing leakage current, providing a promising path for the advancement of ferroelectric devices.

Controllable Distribution and Reversible Migration of Charges in BiFeO3-Based Films on Si Substrates.

Controllable Distribution and Reversible Migration of Charges in BiFeO 3 -Based Films on Si Substrates

Polarization switching in Bi0.8La0.2FeO3 films with ferroelectric/semiconductor heterojunctions

Polarization switching in Bi 0.8 La 0.2 FeO 3 films with ferroelectric/semiconductor heterojunctions

(001)‐oriented BiFeO 3 films integrated on Si with enhanced electrical performances

Synthesis And Ferroelectric Properties Of Bifeo3 Thin Films Grown By Sputtering

Manipulating the Ferroelectric Domain States and Structural Distortion in Epitaxial BiFeO 3 Ultrathin Films via Bi Nonstoichiometry.

Integration of BiFeO3 thin films on Si wafer via a simple sol–gel method

Effects of interface layers and domain walls on the ferroelectric resistive switching behavior of Au/BiFeO3/La0.6Sr0.4MnO3 heterostructures.

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Domain Switching Kinetics in Ferroelectric-Resistive BiFeO3 Thin Film Memories

SYSTEMATIC EXPLORATION OF THE EFFECTS OF CR-DOPING ON MICROSTRUCTURE, INSULATING, AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILM

Ferroelectric Domain Modulation with Tip-Poling Engineering in BiFeO3 Films

Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/Bifeo3 on Srtio3

Impact of texturing on the phase transitions in sol-gel-processed Bi(Sm)FeO(3)thin films on LaNiO3-buffered silicon

Degradation of Ferroelectric and Weak Ferromagnetic Properties of BiFeO 3 Films Due to the Diffusion of Silicon Atoms

Low Voltage Performance Of Epitaxial Bifeo3 Films On Si Substrates Through Lanthanum Substitution

Tuning ferroelectric domains and polarization properties of flexible BiFeO 3 thin films by phase transition engineering

Nonvolatile ferroelectric field control of the anomalous Hall effect in BiFeO3/SrRuO3 bilayer

Interface-induced ferroelectric domains and charged domain walls in Bi Fe O 3 / Sr Ti O 3 superlattices