Integration of BiFeO3 thin films on Si wafer via a simple sol–gel method

Yao Wang,Ce-Wen Nan
DOI: https://doi.org/10.1016/j.tsf.2009.02.142
IF: 2.1
2009-01-01
Thin Solid Films
Abstract:Integration of BiFeO3 (BFO) films on Si substrate is desirable from an application point of view. The growth of (110)-textured BFO thin films with high quality on Si(100) substrate was realized by a seeding technique via a simple sol–gel method. Obviously switchable ferroelectric domains were observed, and in the meantime, the BFO films also exhibited a weak magnetization which somewhat showed dependence on the film thickness. Such an integration of the BFO films on Si constructed a metal/ferroelectric/insulator/semiconductor structure, which presented a memory feature as evidenced by capacitance–voltage hysteresis.
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