Abstract:The integration of oxides with semiconductors is important for the technological advancement of the next generation electronics. Concomitant ferroelectric and antiferromagnetic (AF) behavior is demonstrated in single crystal BiFeO3 (BFO) films grown on 20 nm SrTiO3 (STO) virtual substrates on Si(100) using molecular beam epitaxy (MBE). STO thin films are grown in an oxide MBE chamber by co-deposition of Sr, Ti, and molecular O2. Careful control of the O2 during nucleation produced commensurate growth of STO on Si. The sequence of the steps allows for the suppression of an amorphous SiO2 layer. This STO(20 nm)/Si structure was used as a virtual substrate for MBE deposition of BFO on Si without breaking vacuum. BFO was deposited using Fe and O2 plasma with an overpressure of Bi flux, the growth rate was controlled by the incoming Fe flux. The reflection high energy electron diffraction image shows a 2-D growth front with a 6-fold surface reconstruction under optimized O2 pressure of 5 × 10−8 mbar. Cross-sectional transmission electron microscopy (TEM) confirms the high crystallinity of the films and shows sharp, atomically flat interfaces. The selected area diffraction pattern (SADP) reveals that BFO grows in a distorted rhombohedral crystal structure. X-ray diffraction does not show formation of second phases and is consistent with the TEM and SADP results. The BFO films show AF behavior with a Neel temperature that exceeds 350 K, as expected (TN = 673 K) and with a residual ferromagnetic behavior that decreases with film thickness and is consistent with the G-type AF due to the canted spins. The saturation magnetization per unit volume for a 40 nm thick film was 180 emu/cm3 at an in-plane magnetic field of 8 kOe. The ferroelectric behavior of the films was verified using piezoresponse force microscopy.

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Thickness Dependent Size Effect of BiFeO3 Films Grown on LaNiO3-buffered Si Substrates

Room Temperature Ferroelectric, Ferromagnetic and Magnetoelectric Properties of Ba-Doped Bifeo3 Thin Films

Thickness-dependent ferroelectric and magnetic properties of BiFeO_3 films

Bifeo3 Film Deposited on Si Substrate Buffered with La0.7sr0.3mno3 Electrode

Piezoelectric and magneto-optical effect of lanthanum-doped bismuth ferrite films on silicon substrate

Fabrication and Ferroelectric Properties of Bifeo3/Lanio3 Artificial Superlattice Structures Grown by Radio-Frequency Magnetron-Sputtering

Effect of Magnetic Field on Ferroelectric Properties of BiFeO3/La5/8Ca

Individual-Layer Thickness Effects On The Preferred C-Axis-Oriented Bifeo3 Films By Chemical Solution Deposition

Photocatalytic And Magnetic Behaviors Of Bifeo3 Thin Films Deposited On Different Substrates

Site Modification in Bifeo3 Thin Films Studied by Raman Spectroscopy and Piezoelectric Force Microscopy

Ferroelectric Size Effects In Multiferroic Bifeo3 Thin Films

Thickness-Dependent Structural And Magnetic Properties Of Bifeo3 Films Prepared By Metal Organic Decomposition Method

Effect of Mn Doping on Electric and Magnetic Properties of Bifeo3 Thin Films by Chemical Solution Deposition

Effect of Nd Dopant on Magnetic and Electric Properties of Bifeo3 Thin Films Prepared by Metal Organic Deposition Method

Enhanced Electrical Polarization And Ferromagnetic Moment In A Multiferroic Bifeo3/Bi3.25sm0.75ti2.98v0.02o12 Double-Layered Thin Film

Individual-Layer Thickness Effects on the Preferred<i>c</i>-Axis-Oriented BiFeO<sub>3</sub>Films by Chemical Solution Deposition

Single-domain multiferroic BiFeO3 films

Magnetic and Structural Properties of BiFeO$_{3}$ Thin Films Grown Epitaxially on SrTiO$_{3}$/Si Substrates

The Multiferroic Properties of (bi(0.9)ba(0.1))(fe(0.95)mn(0.05))o(3) Films

Manipulating the Ferroelectric Domain States and Structural Distortion in Epitaxial BiFeO 3 Ultrathin Films via Bi Nonstoichiometry.