Abstract:Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 microC/cm^2, comparable to reports in literature.

Room Temperature Ferroelectric, Ferromagnetic and Magnetoelectric Properties of Ba-Doped Bifeo3 Thin Films

Room temperature multiferrocity and magnetodielectric properties of ternary (1-x) (0.94Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-0.06BaTiO<sub>3</sub>)-xBiFeO<sub>3</sub> (0 ≤x≤ 0.9) solid solutions

Room Temperature Multiferrocity And Magnetodielectric Properties Of Ternary (1-X) (0.94bi(0.5)Na(0.5)Tio(3)-0.06batio(3))-Xbifeo(3) (0 <= X <= 0.9) Solid Solutions

Room-temperature Ferromagnetism and Ferroelectricity in Fe-dopedBaTiO3

Polar Order Evolutions Near the Rhombohedral to Pseudocubic and Tetragonal to Pseudocubic Phase Boundaries of the Bifeo3-Batio3 System

On the room temperature multiferroic BiFeO3: Magnetic, dielectric and thermal properties

Magnetic phase transition induced ferroelectric polarization in BaFeF 4 with room-temperature weak ferromagnetism

Room-temperature ferromagnetism and ferroelectricity in Fe-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>BaTiO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>

Room-Temperature Multiferroics and Thermal Conductivity of 0.85Bife(1-2X)ti(x)mg(x)o(3)-0.15catio(3) Epitaxial Thin Films (X=0.1 and 0.2)

Enhanced Ferroelectricity, Piezoelectricity and Ferromagnetism in (ba0.75ca0.25)tio3 Modified BiFeO3 Multiferroic Ceramics

Room-temperature Magnetoelectric Coupling in Bi4LaFeTi3O15 Multiferroic Films

Ferroelectricity in Pulsed Laser Deposited Ba(Fe1/2nb1/2)O-3 Thin Films

The Multiferroic Properties of (bi(0.9)ba(0.1))(fe(0.95)mn(0.05))o(3) Films

Compositional dependence of dielectric and ferroelectric properties in BiFeO3-BaTiO3 solid solutions

Magnetic Phase Transition Induced Ferroelectric Polarization in BaFeF4 with Room Temperature Weak Ferromagnetism

Modulating Light Absorption and Multiferroic Properties of BiFeO3-based Ferroelectric Films by the Introduction of ZnO Layer

Ferroelectric and Magnetic Properties in (1-X)bifeo3-x(0.5catio(3)-0.5smfeo(3)) Ceramics

Synthesis And Ferroelectric Properties Of Bifeo3 Thin Films Grown By Sputtering

Multiferroic Properties of Ba2+-Ti4+ co-doped YFeO3 Ceramics

Microstructures and Multiferroic Properties of Textured Bi0.8La0.2FeO3 Thin Films

Ferroelectricity of the BiFeO3 prepared by the chemical solution deposition method