Ferroelectricity of the BiFeO3 prepared by the chemical solution deposition method

Caixia Yang,Yinyin Lin,Tingao Tang
DOI: https://doi.org/10.1117/12.607631
2005-01-01
Abstract:Bismuth ferric thin films were fabricated on Pt/Ti/SiO2/Si substrates by the chemical solution deposition Technique. The films were annealed at different temperature using a rapid thermal processor. DTA-TG and DSC-TG were used to study the reaction and crystallization during the process. The influence of the preheated process and annealing temperature on the structure and the morphology of the film were discussed. XRD and SEM were employed to investigate the crystal structure and the phase of the films annealed at different temperatures. The pure phase BiFeO3 thin films were obtained when the film was annealed under the temperature of 800degreesC. Saturated ferroelectric hysterersis loops are observed. The spontaneous polarization and remnant polarization are 6.9 muC/cm(2) and 2.8 muC/cm(2) respectively.
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