Abstract:To evaluate optimizing processing conditions for bismuth ferrite BiFeO3 (BFO) thin films with thicknesses below 200 nm on Pt(111)/Ti/SiO2/Si substrates. The impact of the amorphous components, as well as defects and elemental composition changes and microstructure evolution (i.e., grain size) as regulated by the treatment temperatures (475–600°C) on the ferroelectric and dielectric properties are investigated. The current work shows that with the smallest grain size and the least defects amount achieved in the film annealed at 550°C, the conductivity is compressed greatly. Such a temperature will also allow adequate ferroelectric switching by reducing the amorphous components, which remain the majority below 500°C and thus reinforce the polarization switching. The leakage path is deduced via crystallized grains in BFO thin films instead of the remaining including grain boundaries and amorphous components. The best remanent polarization of ∼60.4 μC·cm‐2 from PUND measurements excluding the leakage contribution at 500 kV·cm−1 and an excellent fatigue property of 106 cycles are achieved. In addition, broadened fabrication temperatures for amorphous‐protected polycrystalline BFO thin films from 525 to 575°C, exhibiting superior ferroelectricity than most previously reported BFO thin films below 200 nm, either derived by chemical or physical methods. Ultimately, it is suggested that for leaky ferroelectrics such as BFO, optimal annealing temperature should balance the amorphous components by reducing the annealing temperature while maintaining adequate crystallization for ferroelectric switching.

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Ferroelectricity of the BiFeO3 prepared by the chemical solution deposition method

Ferroelectric Properties of BiFeO3 Films Grown by Sol–gel Process

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Electric Properties of BiFeO3 Films Deposited on LaNiO3 by Sol-Gel Process

Preparation of Bi3.15Nd0.85Ti3O12 ferroelectric thin films by sol-gel method

Multiferroic BiFeO3 Thin Films Prepared Via a Simple Sol-Gel Method

The Microstructure, Electric, Optical and Photovoltaic Properties of BiFeO3 Thin Films Prepared by Low Temperature Sol⁻Gel Method

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Preparation and Characterization of BiFeO3 Powders by Sol-gel Method

Structural and Ferroic Properties of Zr-doped BiFeO3Thin Films

Sol–gel-processed (001)-textured BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals

Structural, dielectric and ferroelectric properties of BiFeO3–BiInO3 solid solution thin films obtained by sol-gel method

Ferroelectric Properties and Fatigue of Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method

Microstructure And Ferroelectric Properties Of Sol-Gel Derived Bi3.15nd0.85ti3o12 Thin Films On Pt/Ti/Sio2/Si(100)

Electric and magnetic properties of multiferroic (BiFeO<sub>3</sub>)<sub>1−<i>x</i></sub>–(PbTiO<sub>3</sub>)<sub><i>x</i></sub> films prepared by the sol–gel process

Reliable ferroelectricity in sol–gel‐derived BiFeO3 thin films below 200 nm

Structure and Multiferroic Properties of Bifeo3 Powders

Structural and Electrical Properties of Sol–gel-Derived Al-doped Bismuth Ferrite Thin Films

Structural and Magnetic Properties of Bismuth Ferrite Nanopowders Prepared Via Sol-Gel Method

Ferroelectric Domains and Phase Transition of Sol-Gel Processed Epitaxial Sm-doped BiFeO3 (001) Thin Films