Structure, ferroelectric and aging properties of xBi4Ti3O12- (1-x)BiFe0.98Mn0.02O3 films

Zhang, Fengqing
DOI: https://doi.org/10.1007/s10854-024-12070-0
2024-02-08
Journal of Materials Science Materials in Electronics
Abstract:xBi 4 Ti 3 O 12 -(1-x)BiFe 0.98 Mn 0.02 O 3 ( x = 0, 0.1, 0.2, 0.3, 0.4, 0.5; named BTBF-x) solid solution films were fabricated using the sol–gel method and deposited on FTO/glass substrates. The effects of different solid solution ratios on the structure of BTBF-x films and ferroelectric characteristics were examined. The results showed that the proper composite ratio could meliorate the properties of BTBF-x thin films. The crystal structures of the thin film samples with different compounding ratios regularly changed. All BTBF-x samples had a denser surface and good crystallization properties, the particles were smooth particles with regular shapes, and no evident cracks were found. The 0.3BIT-0.7BFMO sample had the lowest Fe 2+ content and oxygen vacancy concentration. At the electric field of 260 kV/cm, this sample also had good ferroelectricity (2Pr = 31.7 μC/cm 2 ) with the lowermost leakage current density ( J = 3.9 × 10 –6 A/cm 2 ), and the main conduction mechanism was the ohmic conduction mechanism. The relative permittivity(ε r ) was measured to be 200.3, and this sample exhibited excellent anti-aging properties.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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