Low-Temperature Tunneling Electroresistance in Ferromagnetic Metal/Ferroelectric/Semiconductor Tunnel Junctions
Liming Chen,Jian Zhou,Xiao Zhang,Kuankuan Ding,Jianxiang Ding,Zhengming Sun,Xuefeng Wang
DOI: https://doi.org/10.1021/acsami.1c05366
2021-05-04
Abstract:Ferroelectric tunnel junctions (FTJs) as artificial synaptic devices are promising candidates for the building block of nonvolatile data storage devices. However, a small ON/OFF ratio of FTJs limits their application in low-temperature operations. In this work, the influence of quantum interference effects on tunneling electroresistance in the La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/BaTiO<sub>3</sub>/Nb:SrTiO<sub>3</sub> (ferromagnetic metal/ferroelectric/semiconductor) FTJ at low temperatures is investigated. The Current–voltage curves are observed in the tunnel junction from 300 to 10 K with a six-unit-cell thick BaTiO<sub>3</sub> film by the ferroelectric polarization effect. First, the ON/OFF current ratio increases from 300 to 30 K due to the increase of polarization in the ferroelectric barrier, and then, it gradually decreases when the temperature drops below 30 K. An anomalous ON/OFF current ratio of ∼10<sup>5</sup> is obtained at 30 K. The low-temperature tunneling properties in the FTJ are associated with a low-temperature resistivity minimum in the ferromagnetic metal layer by the electron–electron interaction, which increases the La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/BaTiO<sub>3</sub> interface resistance, leading to a higher resistance state and lower <i>I</i><sub>OFF</sub> for the OFF state. As a result, the ON/OFF current ratio is abruptly enhanced at 30 K. Our results emphasize the crucial role of transport properties of La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> in FTJs and pave the way for the design and application of FTJs at low temperatures.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c05366?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c05366</a>.ON and OFF states of <i>I–V</i> curves of LSMO/BTO/Nb:STO FTJ at 30 K; temperature-dependent transport characteristics of Pt/BTO/Nb:STO FTJ; tunneling current and current on/off ratio dependence of temperature of Pt/BTO/Nb:STO FTJ; and fatigue characteristics of the resistance switch (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c05366/suppl_file/am1c05366_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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