Bipolar Resistance Switching Characteristics of ZnO/Nb-Doped SrTiO3 Heterojunctions

张洪建,张晓平,赵永刚,zhang hongjian,zhang xiaoping,zhao yonggang
DOI: https://doi.org/10.1088/0256-307X/26/7/077303
2009-01-01
Chinese Physics Letters
Abstract:An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO3 heterojunctions is reported. The current-voltage curves of these junctions show hysteresis. Multi-resistance states are realized by applying voltage pulses with different amplitudes, and the resistance switching effect is more remarkable at low temperatures. The junction capacitance decreases dramatically with increasing frequency. Analysis of the results suggests that the trapping-detrapping process plays an important role in the resistance switching effect.
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