Abstract:Thermoelectric energy conversion - the exploitation of the Seebeck effect to convert waste heat into electricity - has attracted an increasing amount of research attention for energy harvesting technology. Niobium-doped strontium titanate (SrTi1-xNbxO3) is one of the most promising thermoelectric material candidates, particularly as it poses a much lesser environmental risk in comparison to materials based on heavy metal elements. Two-dimensional electron confinement, e.g. through the formation of superlattices or two-dimensional electron gases, is recognized as an effective strategy to improve the thermoelectric performance of SrTi1-xNbxO3. Although electron confinement is closely related to the electronic structure, the fundamental electronic phase behavior of the SrTi1-xNbxO3 solid solution system has yet to be comprehensively investigated. Here, we present a thermoelectric phase diagram for the SrTi1-xNbxO3 (0.05 =< x =< 1) solid solution system, which we derived from the characterization of epitaxial films. We observed two thermoelectric phase boundaries in the system, which originate from the step-like decrease in carrier effective mass at x ~ 0.3, and from a local minimum in carrier relaxation time at x ~ 0.5. The origins of these phase boundaries are considered to be related to isovalent/heterovalent B-site substitution: parabolic Ti 3d orbitals dominate electron conduction for compositions with x < 0.3, whereas the Nb 4d orbital dominates when x > 0.3. At x ~ 0.5, a tetragonal distortion of the lattice, in which the B-site is composed of Ti4+ and Nb4+ ions, leads to the formation of tail-like impurity bands, which maximizes the electron scattering. These results provide a foundation for further research into improving the thermoelectric performance of SrTi1-xNbxO3.

Impact of Interfacial Resistance Switching on Thermoelectric Effect of Nb-Doped Srtio3 Single Crystalline

High thermoelectric performance of niobium-doped strontium titanate bulk material affected by all-scale grain boundary and inclusions

High thermoelectric performance of Nb-doped SrTiO3 bulk materials with different doping levels

Record High Thermoelectric Performance in Bulk SrTiO3 Via Nano-Scale Modulation Doping

Comprehensive Study Of The Resistance Switching In Srtio3 And Nb-Doped Srtio3

Relationship Between the Thermoelectric Properties and Infrared Emissivity of Nb-Doped TiO2

Origin of Resistance Switching and Regulation of the Resistance Stability by the Interface State Density on the Pt/Nb:SrTiO3 Interface

Metal and Annealing Atmospheres Dependence of Resistive Switching in Metal/Nb-0.7wt%-Srtio3 Interfaces

High thermoelectric properties of P-SiGe/Sr0.9La0.1Ti0.9-xZrxNb0.1O3 composite

First-principles calculations and high thermoelectric performance of La–Nb doped SrTiO3 ceramics

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Strain-assisted Tunneling Current Through TbMnO3∕Nb-1 Wt %-Doped SrTiO3 P–n Junctions

The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence

Resistive Switching Effect In Srtio3-Delta/Nb-Doped Srtio3 Heterojunction

Evolution of Resistive Switching and Its Ionic Models in Pt/Nb-doped SrTiO3junctions

Temperature-dependent Resistance Switching in SrTiO3

Effect of Crystal Orientation on Seebeck Coefficient and Electrical Conductivity of SrTiO3 Single Crystals

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO 3 Devices

Thermoelectric phase diagram of the SrTiO3-SrNbO3 solid solution system

Resistive Switching Effect in SrTiO3−δ∕Nb-doped SrTiO3 Heterojunction

Anomalous dielectric relaxation peak in Nb-doped SrTiO3 single crystals