Abstract:The pursuit of advanced brain-inspired electronic devices and memory technologies has led to explore novel materials by processing multimodal and multilevel tailored conductive properties as the next generation of semiconductor platforms, due to von Neumann architecture limits. Among such materials, antimony sulfide (Sb2S3) thin films exhibit outstanding optical and electronic properties, and therefore, they are ideal for applications such as thin-film solar cells and nonvolatile memory systems. This study investigates the conduction modulation and memory functionalities of Sb2S3 thin films deposited via the vapor transport deposition technique. Experimental results indicate that the Ag/Sb2S3/Pt device possesses properties suitable for memory applications, including low operational voltages, robust endurance, and reliable switching behavior. Further, the reproducibility and stability of these properties across different device batches validate the reliability of these devices for practical implementation. Moreover, Sb2S3-based memristors exhibit artificial neuroplasticity with prolonged stability, promising considerable advancements in neuromorphic computing. Leveraging the photosensitivity of Sb2S3 enables the Ag/Sb2S3/Pt device to exhibit significant low operating potential and conductivity modulation under optical stimulation for memory applications. This research highlights the potential applications of Sb2S3 in future memory devices and optoelectronics and in shaping electronics with versatility.

GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag$_{2}$S Devices

Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design

Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors

High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer

Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb 2 Te 3 /Ag heterojunctions.

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Volatile threshold switching and synaptic property controlled by Ag diffusion using Schottky defect

Observing "Quantized" Conductance Steps in Silver Sulfide: Two Parallel Resistive Switching Mechanisms

Anatomy of A Nanoscale Conduction Channel Reveals the Mechanism of A High-Performance Memristor

Memristive Behaviors in Ag2s Nano-Particles Assembly

Resistive Switching Devices Based on Nanocrystalline Solid Electrolyte (Agi)0.5(agpo3)0.5

Multilevel Conductance States of Vapor-Transport-Deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation

Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches

Volatile MoS${_2}$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Anisotropic MagnetoMemristance

The Growth Of Metallic Nanofilaments In Resistive Switching Memory Devices Based On Solid Electrolytes

Quantum Conductance in Mos2 Quantum Dots-Based Nonvolatile Resistive Memory Device