Abstract:Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal correlated material, VO2, has been intensively studied for its complex electronic and structural phase transition as well as its filament formation under applied voltages. Local structural studies of the filament behavior are often limited due to time-consuming rastering which makes impractical many experiments aimed at investigating large spatial areas or temporal dynamics associated with the electrical triggering of the phase transition. Utilizing Dark Field X-ray Microscopy (DFXM), a novel full-field x-ray imaging technique, we study this complex filament formation process in-operando in VO2 devices from a structural perspective. We show that prior to filament formation, there is a significant gain of the metallic rutile phase beneath the metal electrodes that define the device. We observed that the filament formation follows a preferential path determined by the nucleation sites within the device. These nucleation sites are predisposed to the phase transition and can persistently maintain the high-temperature rutile phase even after returning to room temperature, which can enable a novel training/learning mechanism. Filament formation also appears to follow a preferential path determined by a nucleation site within the device which is predisposed to the rutile transition even after returning to room temperature. Finally, we found that small isolated low-temperature phase clusters can be present inside the high-temperature filaments indicating that the filament structure is not uniform. Our results provide a unique perspective on the electrically induced filament formation in metal-insulator transition materials, which further the basic understanding of this resistive switching.

In situ observation of indium filament growth dynamics in ITO electrode-based memristor

Guiding the Growth of a Conductive Filament by Nanoindentation to Improve Resistive Switching

Observation of conducting filament growth in nanoscale resistive memories

Atomic View of Filament Growth in Electrochemical Memristive Elements

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Electric Field-Dependent Evolution Dynamics of Conductive Filaments in 2D Material-Based Planar Memristors

Suppressing Degradation of ITO Electrode for Electroluminescence Device by Transparent MoO3 Barrier Layer

Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Probing Nanoscale Oxygen Ion Motion In Memristive Systems

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

Characteristics of Different Types of Filaments in Resistive Switching Memories Investigated by Complex Impedance Spectroscopy

Response to “comment on Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM”

High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Formation Process of Conducting Filament in Planar Organic Resistive Memory