Abstract:Electrothermal performance of Resistive Random Access Memory (RRAM) composed of five different resistive switching oxides is studied numerically in this paper. Finite element method-based parallel computing simulator is employed to conduct the electrothermal simulation of both RRAM cell and array. Simulation results indicate that NiO and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs generate higher heat than HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs, as their electric conductivity are higher in the same voltage. During the reset, ZnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAM requires lower voltage to be transferred into high-resistance state due to its higher oxygen vacancy drift rate. The heat crosstalk problem in RRAM array is also investigated, which can decrease reliability during the reset of RRAM. Inactive cells can be transferred into high-resistance state unintentionally with stored information lost. In the same voltage, both HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> RRAMs are less affected by heat crosstalk due to their lower oxygen vacancy drift rate.

Response to “comment on Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM”

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

In-situ Observation of Cu Filaments Evolution in SiO2 Layer

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Simulation Study of Conductive Filament Growth Dynamics in Oxide-Electrolyte-Based Reram

Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer

Visualization of conductive filaments in TaO x -based ReRAM devices and investigation of their evolution during cycling by EBIC

Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule

Observation of conducting filament growth in nanoscale resistive memories

Position detection and observation of a conducting filament hidden under a top electrode in a Ta₂O₅-based atomic switch.

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Formation Process of Conducting Filament in Planar Organic Resistive Memory

Multilevel Resistive Switching With Ionic And Metallic Filaments

Filament Growth Dynamics in Solid Electrolyte-Based Resistive Memories Revealed by in Situ TEM

Atomic View of Filament Growth in Electrochemical Memristive Elements

Electrochemical Simulation of Filament Growth and Dissolution in Conductive-Bridging RAM (CBRAM) with Cylindrical Coordinates

Confirmation Of Filament Dissolution Behavior By Analyzing Electrical Field Effect During Reset Process In Oxide-Based Rram

Formation of Multiple Conductive Filaments in the Cu/ZrO2:Cu/Pt Device