Abstract:Top Row: (d) TEM micrograph of the TaOx‐based ReRAM element with the TiN electrodes, TaOx switching and Ta oxygen exchange layer. (e) EDX 2D scan of ReRAM stack and V0 layer. Bottom Plots: Measured and the predicted I–V curves of the TaOx memristor device for various NMOS gate voltages (Vg) and electrical conductivity of conducting filament. Memristors, non‐volatile switching memory platform, has recently attracted significant interest, offering unique potential to enable the realization of human brain‐like neuromorphic computing efficiency. Memristors also demonstrate excellent temperature tolerance, long‐term durability, and high tunability with nanosecond pulses, making them highly attractive for neuromorphic computing applications. To better understand the material processing, microstructure, and property relationship of switching mechanisms in memristor devices, computational methodologies, and tools are developed to predict the I–V characteristics of memristor devices based on tantalum oxide (TaOx) resistive random‐access memory (ReRAM) integrated with an n‐channel metal–oxide–semiconductor (NMOS) transistor. A multiphysics model based on coupled partial differential equations for electrical and thermal transport phenomena is solved for the high‐ and low‐resistance states during the formation, growth, and destruction of a conducting filament through SET and RESET stages. These stages effectively represent the migration of oxygen vacancies within an oxide exchange layer. A series of parametric studies and energy minimization calculations are conducted to determine probable ranges for key material and model parameters accounting for the experimental data. The computational model successfully predicted the measured I–V curves across various gate voltages applied to the NMOS transistor in the one transistor one resistance (1T1R) configuration.

Visualization of conductive filaments in TaO x -based ReRAM devices and investigation of their evolution during cycling by EBIC

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Response to “comment on Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM”

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule

Structural Analysis and Performance in a Dual‐Mechanism Conductive Filament Memristor

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Complementary Switching in 3D Resistive Memory Array

A Resistive Device with Electrolyte As Active Electrode

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Observation of conducting filament growth in nanoscale resistive memories

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Impact of lattice plane orientation in TiO 2 based resistive switching memory: A computational approach

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory