Abstract:In resistive random access memories, modeling conductive filament growing dynamics is important to understand the switching mechanism and variability. In this paper, a universal Monte Carlo simulator is developed based on a cell switching model and a tunneling-based transport model. Driven by external electric field, the growing process of the nanoscale filament occurring in the gap region is actually dominated by cells’ conductive/insulating switching, modeled through a phenomenological physics-based probability function. The electric transport through the partially formed CF is considered as current tunneling in the framework of the Quantum Point Contact model, and the potential barrier is modulated during cells’ evolution. To demonstrate the validity and universality of our simulator, various operation schemes are simulated, with the simulated I − V characteristics well explaining experimental observations. Furthermore, the statistical analyses of simulation results in terms of Weibull distribution and conductance evolution also nicely track previous experimental results. Representing a simulation scale that links atomic-scale simulations to compact modeling, our simulator has the advantage of being much faster comparing with other atomic-scale models. Meanwhile, our simulator shows good universality since it can be applied to various operation signals, and also to different electrodes and dielectric layers dominated by different switching mechanisms.

Electrochemical Simulation of Filament Growth and Dissolution in Conductive-Bridging RAM (CBRAM) with Cylindrical Coordinates

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

A unified model of metallic filament growth dynamics for conductive-bridge random access memory (CBRAM)

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Atomistic Study Of Dynamics For Metallic Filament Growth In Conductive-Bridge Random Access Memory

An analytical model for predicting forming/switching time in conductive-bridge resistive random-access memory (CBRAM)

Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Device Simulation and Modeling of RRAM Switching Processes

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory Via a Universal Monte Carlo Simulator

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by Kmc Simulation

Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface Engineering

Response to “comment on Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM”