Abstract:We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given—a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

A unified model of metallic filament growth dynamics for conductive-bridge random access memory (CBRAM)

Atomistic Study Of Dynamics For Metallic Filament Growth In Conductive-Bridge Random Access Memory

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Electrochemical Simulation of Filament Growth and Dissolution in Conductive-Bridging RAM (CBRAM) with Cylindrical Coordinates

Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

An analytical model for predicting forming/switching time in conductive-bridge resistive random-access memory (CBRAM)

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

A New Compact Model for Bipolar RRAMs Based on Truncated-Cone Conductive Filaments—a Verilog-A Approach

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory with Single Filament Formation

Atomic View of Filament Growth in Electrochemical Memristive Elements

Cluster-Type Filaments Induced by Doping in Low-Operation-Current Conductive Bridge Random Access Memory

Device Simulation and Modeling of RRAM Switching Processes

Conductive bridging random access memory—materials, devices and applications