Abstract:Abstract Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2− x systems such as HfO 2− x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.

An analytical model for predicting forming/switching time in conductive-bridge resistive random-access memory (CBRAM)

An Analytical Model for the Forming Process of Conductive-Bridge Resistive-Switching Random-Access Memory

A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

A unified model of metallic filament growth dynamics for conductive-bridge random access memory (CBRAM)

Atomistic Study Of Dynamics For Metallic Filament Growth In Conductive-Bridge Random Access Memory

Electrochemical Simulation of Filament Growth and Dissolution in Conductive-Bridging RAM (CBRAM) with Cylindrical Coordinates

Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries

Device Simulation and Modeling of RRAM Switching Processes

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Cluster-Type Filaments Induced by Doping in Low-Operation-Current Conductive Bridge Random Access Memory

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

Compact Analytical Models for the SET and RESET Switching Statistics of RRAM Inspired in the Cell-Based Percolation Model of Gate Dielectric Breakdown

A New Compact Model for Bipolar RRAMs Based on Truncated-Cone Conductive Filaments—a Verilog-A Approach

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

Cell-based Models for the Switching Statistics of RRAM

A physics/circuit-based switching model for carbon-based resistive memory with sp 2/sp 3 cluster conversion