Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

Probing Nanoscale Oxygen Ion Motion In Memristive Systems

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

Probing Memristive Switching in Nanoionic Devices

In situ transmission electron microscopy studies on nanomaterials and HfO2-based storage nanodevices

Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles

Nondestructive Visualization of Interfacial Conducting Inhomogeneities in Memristive Oxides by Electroluminescence

Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO2.5-σ

Investigation on the Mechanism and Application of Nanoscale NiO Memristors

Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films

Oxygen Migration Around the Filament Region in HfOx Memristors

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices

Controlled Formation of Conduction Channels in Memristive Devices Observed by X‐ray Multimodal Imaging

Direct Observation of Oxygen Ion Dynamics in a WO3‐x based Second‐Order Memristor with Dendritic Integration Functions

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Real-time in situ optical tracking of oxygen vacancy migration in memristors