Nondestructive Visualization of Interfacial Conducting Inhomogeneities in Memristive Oxides by Electroluminescence

Weijian Lin,Dong Li,Yangtao Su,Haibin Shi,Li Wang,Xinyu Cao,Yang Meng,Hongwu Zhao
DOI: https://doi.org/10.1002/admi.202001617
IF: 5.4
2020-11-30
Advanced Materials Interfaces
Abstract:<p>The formation of conducting paths consisting of oxygen vacancies plays a crucial role in the resistive switching (RS) phenomenon in oxides. However, it is extremely challenging to probe the dynamic distribution of oxygen vacancies under changing electric field without breaking the device. In this work, the temporal‐spatial variation of oxygen vacancies in memristive Nb‐SrTiO<sub>3</sub> devices has been investigated nondestructively by defect states mediated electroluminescence (EL). The disparate spatial inhomogeneities of conducting paths penetrating the Au/Nb‐SrTiO<sub>3</sub> interfaces are clearly demonstrated on the device scale, which is completely subject to the forming bias polarity. Moreover, the EL spectroscopy results confirm the existence of temporary nonequilibrium states in conducting paths. The causal relationship between the EL emission and oxygen vacancies concentration paves a pathway to explore RS dynamics in oxides, and further to design novel electro‐optical devices.</p>
materials science, multidisciplinary,chemistry
What problem does this paper attempt to address?
This paper mainly discusses the problem of non-uniform interface conduction visualization through electroluminescence (EL) in memristive oxides. The focus of the study is on the resistive switching (RS) phenomenon, particularly the role of conductive paths formed by oxygen vacancies in oxides. However, directly detecting the dynamic distribution of oxygen vacancies under changing electric fields is challenging because these interfaces and nanowires are often buried under metal electrodes. In the paper, the researchers achieved in-situ observation of the uneven conduction paths in RS devices through the observation of electroluminescence emissions related to oxygen vacancies. They demonstrated the temporal and spatial variations of oxygen vacancies in memristive Nb-SrTiO3 devices under different resistance states, and revealed different spatially non-uniform conduction paths driven by significant electrically formed current densities. Additionally, spectroscopic electroluminescence analysis confirmed the existence of temporary non-equilibrium states in the conductive paths. Doped strontium titanate (SrTiO3) was used as the model material in the study, and the electroluminescence (EL) signal of Au/Nb-SrTiO3/Au devices was observed through synchronized electro-optical characterization during the electromigration and RS processes. The results showed that there was a causal relationship between the intensity, distribution, and spectrum of electroluminescence and the concentration of oxygen vacancies, providing a new avenue for exploring the dynamics of RS in oxides and designing novel optoelectronic devices. Specifically, the study found that the application of electric field-induced RS in the metal/oxide/metal structure has sparked great interest, but it is very difficult to monitor the dynamic distribution of oxygen vacancies during the RS process. Through electroluminescence, the researchers were able to observe the distribution of oxygen vacancies during formation and switching processes, especially the non-uniformity on both sides of the electrodes. During the electromigration process, the EL emission on one side of the electrode increased with increasing voltage, then suddenly disappeared when the forming voltage was reached, while it slowly decayed at lower voltages on the other side. During the RS process, the EL characteristics showed the distribution changes of oxygen vacancies under electric field driving, corresponding to different resistance states. In summary, this work has developed a new non-destructive method to study the dynamic behavior of oxygen vacancies in RS devices through electroluminescence, which is of great importance for understanding the RS mechanism and optimizing the design of oxide-based optoelectronic devices.