TROPICAL AND EPIDEMIC SPASTIC PARAPARESES ARE DIFFERENT

H. Rosling,A. Gessain,G. Thé,N. Ebondo,M. Banea,N. Bikangi,K. Kinjanja,M. Nunga,B. Sörbo

DOI: https://doi.org/10.1016/S0140-6736(88)92036-3

IF: 202.731

1988-05-28

The Lancet

Abstract:

What problem does this paper attempt to address?

Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO 3-δ /Nb:SrTiO 3 Epitaxial Heterojunction for Noise-Tolerant High-Precision Image Recognition

Rui Su,Dunbao Chen,Weiming Cheng,Ruizi Xiao,Yuheng Deng,Yufeng Duan,Yi Li,Lei Ye,Hongyu An,Jingping Xu,Peter To Lai,Xiangshui Miao

DOI: https://doi.org/10.1021/acsami.4c07951

IF: 9.5

2024-09-27

ACS Applied Materials & Interfaces

Abstract:Neuromorphic computing, inspired by the brain's architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in...

materials science, multidisciplinary,nanoscience & nanotechnology
An Electroforming-Free, Analog Interface-Type Memristor Based on a SrFeOx Epitaxial Heterojunction for Neuromorphic Computing

J. Rao,Z. Fan,L. Hong,S. Cheng,Q. Huang,J. Zhao,X. Xiang,E. -J. Guo,H. Guo,Z. Hou,Y. Chen,X. Lu,G. Zhou,X. Gao,J. -M. Liu

DOI: https://doi.org/10.1016/j.mtphys.2021.100392

IF: 11.021

2021-01-01

Materials Today Physics

Abstract:Distinct from the conductive filament-type counterparts, the interface-type resistive switching (RS) devices are electroforming-free and exhibit bidirectionally continuous conductance changes, making them promising candidates as analog synapses. While the interface-type RS devices typically operate through the interfacial oxygen migration, materials which can tolerate a wide range of oxygen non-stoichiometry and possess high oxygen mobility are therefore demanded. SrFeOx (SFO), which can easily transform between a conductive, oxygenated perovskite SrFeO3 (PV-SFO) phase and an insulating, oxygen-vacancy-rich brownmillerite SrFeO2.5 (BM-SFO) phase under electric field, emerges as a suitable material. Herein, an interface-type RS device is ingeniously structured by two epitaxial SFO layers: a PV-SFO matrix layer and an ultrathin BM-SFO interfacial layer, aiming to leverage the oxygen migration-induced interfacial BM-PV phase transformation to realize the gradual conductance modulation. Experimentally, the fabricated device exhibits electroforming-free, analog memristive behavior. This device also emulates essential synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, transition from short-term memory to long-term memory, spike-timing-dependent plasticity, and potentiation/depression. A simulated neural network built from the SFO-based synapses achieves accuracies above 88% for image recognition. This work provides a novel approach to use the SFO family of topotactic materials for developing analog synapses as building blocks for neuromorphic computing circuits.
Complementary Digital and Analog Resistive Switching Based on AlO$_{\textit{x}}$ Monolayer Memristors for Mixed-Precision Neuromorphic Computing

Chengcheng Wang,Bo Chen,Junyao Mei,Lu Tai,Yueran Qi,Yuan Gao,Jixuan Wu,Xuepeng Zhan,Jiezhi Chen

DOI: https://doi.org/10.1109/ted.2023.3280146

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:Neuromorphic computing is a potential candidate to break the von Neumann bottleneck, in which the trade-off between computational precision and energy consumption remains challenging. In this brief, a complementary memristor cell based on monolayer AlOx film is proposed, whose two components exhibit analog (N-Si/AlOx/TiN) and digital (N-Si/AlOx/Cu) resistive switching behaviors. Typical synapse behaviors including spike time-dependent plasticity (STDP) and long-term potentiation/depression (LTP/LTD) are emulated in different working modes. Moreover, with the high/low resistive state (HRS/LRS) in the digital component, the cell shows low/high accuracies with different power consumption, which are ~82% and ~94% in the Modified National Institute of Standards and Technology (MNIST) recognition task. Our findings may provide the potential to develop energy-efficient, feasible integrating, and mixed-precision neuromorphic computing based on AlOx monolayer memristors.

engineering, electrical & electronic,physics, applied
Artificial optoelectronic synapse based on epitaxial Ba0.6Sr0.4TiO3 thin films memristor for neuromorphic computing and image recognition

Jingjuan Wang,Yiduo Shao,Changliang Li,Baoting Liu,Xiaobing Yan

DOI: https://doi.org/10.1063/5.0124217

IF: 4

2022-12-30

Applied Physics Letters

Abstract:Electronic synaptic devices with photoelectric sensing function are becoming increasingly important in the development of neuromorphic computing system. Here, we present a photoelectrical synaptic system based on high-quality epitaxial Ba 0.6 Sr 0.4 TiO 3 (BST) films in which the resistance ramp characteristic of the device provides the possibility to simulate synaptic behavior. The memristor with the Pt/BST/Nb:SrTiO 3 structure exhibits reliable I–V characteristics and adjustable resistance modulation characteristics. The device can faithfully demonstrate synaptic functions, such as potentiation and depression, spike time-dependent plasticity, and paired pulse facilitation, and the recognition accuracy of handwritten digits was as high as 92.2%. Interestingly, the functions of visual perception, visual memory, and color recognition of the human eyes have also been realized based on the device. This work will provide a strong candidate for the neuromorphic computing hardware system of photoelectric synaptic devices.

physics, applied
Ultrathin SrTiO3-based oxide memristor with both drift and diffusive dynamics as versatile synaptic emulators for neuromorphic computing

Fang Nie,Jie Wang,Hong Fang,Shuanger Ma,Feiyang Wu,Wenbo Zhao,Shizhan Wei,Yuling Wang,Le Zhao,Shishen Yan,Chen Ge,Limei Zheng

DOI: https://doi.org/10.1088/2752-5724/ace3dc

2023-07-05

Materials Futures

Abstract:Artificial synapses are electronic devices that simulate important functions of biological synapses, and therefore are the basic components of artificial neural morphological networks for brain-like computing. A most important objective for developing artificial synapses is to simulate the characteristics of biological synapses as much as possible, especially their self-adaptive ability to external stimuli. Here we have successfully developed an artificial synapse with multiple synaptic functions and highly adaptive characteristic based on a simple SrTiO3/Nb:SrTiO3 heterojunction type memristor. Diverse functions of synaptic learning, such as short-term/long-term plasticity, transition from short- to long-term plasticity, learning-forgetting-relearning behaviors, associative learning and dynamic filtering, are all bio-realistically implemented in a single device. The remarkable synaptic performance is attributed to the fascinating inherent dynamics of oxygen vacancy drift and diffusion, which give arise to the coexistence of volatile- and nonvolatile- type resistive switching. This work reports a multi-functional synaptic emulator with advanced computing capability based on a simple heterostructure, showing great application potential for a compact and low-power neuromorphic computing system.
In2O3/ZnO Heterojunction Thin Film Transistor for High Recognition Accuracy Neuromorphic Computing and Optoelectronic Artificial Synapses

Shangheng Sun,Minghao Zhang,Jing Bian,Ting Xu,Jie Su

DOI: https://doi.org/10.1088/1361-6528/ad5685

IF: 3.5

2024-06-13

Nanotechnology

Abstract:Solid electrolyte-gated transistors exhibit improved chemical stability and can fulfill the requirements of microelectronic packaging. Typically, metal oxide semiconductors are employed as channel materials. However, the extrinsic electron transport properties of these oxides, which are often prone to defects, pose limitations on the overall electrical performance. Achieving excellent repeatability and stability of transistors through the solution process remains a challenging task. In this study, we propose the utilization of a solution-based method to fabricate an In2O3/ZnO heterojunction structure, enabling the development of efficient multifunctional optoelectronic devices. The heterojunction's upper and lower interfaces induce energy band bending, resulting in the accumulation of a large number of electrons and a significant enhancement in transistor mobility. To mimic synaptic plasticity responses to electrical and optical stimuli, we utilize Li+-doped high-k ZrOX thin films as a solid electrolyte in the device. Notably, the heterojunction transistor-based convolutional neural network achieves a high accuracy rate of 93% in recognizing handwritten digits. Moreover, our research involves the simulation of a typical sensory neuron, specifically a nociceptor, within our synaptic transistor. This research offers a novel avenue for the advancement of cost-effective three-terminal thin-film transistors tailored for neuromorphic applications.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Badri Narayanan,Ranga Teja Pidathala

DOI: https://doi.org/10.1149/ma2024-01573014mtgabs

2024-08-09

ECS Meeting Abstracts

Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.
Oxygen Incorporated MoS2 for Rectification‐Mediated Resistive Switching and Artificial Neural Network

Xuya Xiong,Fan Wu,Yi Ouyang,Yanming Liu,Zegao Wang,He Tian,Mingdong Dong

DOI: https://doi.org/10.1002/adfm.202213348

IF: 19

2023-07-13

Advanced Functional Materials

Abstract:The p‐type doping effect in oxygen incorporated MoS2 film by in situ KPFM measurement, the as‐prepared TiN/O‐MoS2 memristor is confirmed with rectification‐mediated switching feature is examined. Attributing to the analog response to synaptic behavior, multi‐layer perceptron neural network for handwritten digits recognition is conducted and it achieves high recognition accuracy of up to 94%, implying promising biorealistic application. Molybdenum disulfide (MoS2) based memristor presents intriguing chance for the implementation bio‐inspired artificial synapse and neural interactions. However, the electrical properties of intrinsic MoS2 single‐crystal film suffer from inevitable lattice defects or structure vacancies as well as restraining reliable resistive switching mechanism. Here, a fundamental study on tunable p‐type doping in MoS2 film by controllable oxygen passivation is reported. In situ KPFM measurements reveal a near‐linear increase in Fermi‐level energy. The TiN/O‐MoS2 memristor exhibits surprising bipolar switching feature, revealing an interesting transition between rectification‐mediated and conduction‐mediated characteristics by means of controllable surficial oxygen kinetics. The resistive window demonstrates nearly symmetric SET and RESET domain and capability to analog programming conductance. Moreover, based on the MoS2 memristor, the accuracy up to 94% for MINST recognition ensures the implementation of neural network and LTP/LTD behaviors. This as‐prepared memristor is capable of mimicking synaptic feature through regulated resistive mechanics and electrode contact interaction, which can be an up‐and‐coming strategy for bio‐realistic electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor

Yu She,Fang Wang,Xuanyu Zhao,Zhenzhong Zhang,Chuang Li,Honggang Pan,Kai Hu,Zhitang Song,Kailiang Zhang

DOI: https://doi.org/10.1109/ted.2021.3056333

IF: 3.1

2021-04-01

IEEE Transactions on Electron Devices

Abstract:Transparent synaptic devices remain great prospects for a future comprehensive simulation of artificial synapses with the combination of photoelectric coupling characteristics in the neuromorphic system. In this article, one type of memristors based on a stack structure of ITO/TiOy/TiOx/TiN with high transmittance (${T}>81$ %) is fabricated, in which an oxygen-deficient TiOy layer between TiOx and ITO top electrode is introduced to adjust the gradual current characteristics during the SET/RESET process. Furthermore, the devices with different thickness ratios (1:4, 1:2, 1:1, 2:1) of oxygen-deficient TiOy active layers are designed to realize the adjustability of the multilevel resistance state and the analog resistive switching (RS) behavior and improve electrical performances and synaptic simulation characteristics. Meantime, the device based on optimum thickness ratio (1:2) offers excellent uniformity for 1000 cycles and better nonlinearity (0.69) at a low programming power consumption, which reveals further simulation of essential synaptic functions, including paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP) as well as learning–relearning characteristics. In addition, oxygen concentration gradient could be regulated by controlling the thickness ratio to drive oxygen vacancy redistribution at the interfacial layer, which are also demonstrated by high-resolution transmission electron microscopy (HRTEM) and improve electronic properties and analog modulation characteristics.

engineering, electrical & electronic,physics, applied
Self‐Rectifying Short‐Term Memory Phenomena Through Integration of TiOx Oxygen Reservoir and Al2O3 Barrier Layers for Neuromorphic System

Hyeonseung Ji,Sungjoon Kim,Sungjun Kim

DOI: https://doi.org/10.1002/admt.202400895

IF: 6.8

2024-09-15

Advanced Materials Technologies

Abstract:This study proposes using the short‐term characteristics of the Pt/Al/TiOx/HfOx/Al2O3/Pt tri‐layer device for neuromorphic computing applications that mimic the human brain. Utilizing the natural decay characteristic within the device emulates human forgetting to process temporal information. This approach demonstrates effective accuracy in recognizing 4‐bit hand‐digit images, making it suitable for applications such as real‐time data analysis. In this study, a tri‐layer Pt/Al/TiOx/HfOx/Al2O3/Pt memristor device is fabricated and analyze its electrical characteristics for reservoir computing and neuromorphic systems applications. This device incorporates an oxygen reservoir of a TiOx and a barrier layer of an Al2O3, enabling stable bipolar switching characteristics without the need for an electroforming process over 103 cycles. It also exhibits self‐rectifying properties under a negative bias. Based on these characteristics, it is investigated essential synaptic functions such as long‐term potentiation (LTP), long‐term depression (LTD), paired‐pulse facilitation (PPF), spike‐rate‐dependent plasticity (SRDP), spike‐duration‐dependent plasticity (SDDP), spike‐number‐dependent plasticity (SNDP), and spike‐amplitude‐dependent plasticity (SADP), to assess their suitability for neuromorphic applications that mimic biological synapses. Furthermore, utilizing the short‐term memory characteristics of the device, reservoir computing (RC) measurement from [0000] to [1111] in 4‐bit representation is conducted. This capability enables us to achieve a high accuracy of 95.5% in MNIST pattern recognition tasks. Lastly, the natural decay characteristics caused by oxygen ion migration in the device, examining the transition from short‐term to long‐term memory in image memorization tasks is explored. The potential for deployment in high‐density crossbar arrays by calculating the read margin based on the device I–V curve and programming scheme is also evaluated.

materials science, multidisciplinary
High-Performance Neuromorphic Computing and Logic Operation Based on a Self-Assembled Vertically Aligned Nanocomposite SrTiO 3 :MgO Film Memristor

Zhenqiang Guo,Gongjie Liu,Yong Sun,Yinxing Zhang,Jianhui Zhao,Pan Liu,Hong Wang,Zhenyu Zhou,Zhen Zhao,Xiaotong Jia,Jiameng Sun,Yiduo Shao,Xu Han,Zixuan Zhang,Xiaobing Yan

DOI: https://doi.org/10.1021/acsnano.3c06510

IF: 17.1

2023-10-30

ACS Nano

Abstract:Neuromorphic computing based on memristors capable of in-memory computing is promising to break the energy and efficiency bottleneck of well-known von Neumann architectures. However, unstable and nonlinear conductance updates compromise the recognition accuracy and block the integration of neural network hardware. To this end, we present a highly stable memristor with self-assembled vertically aligned nanocomposite (VAN) SrTiO(3):MgO films that achieve excellent resistive switching with low...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

Eng Kang Koh,Putu Andhita Dananjaya,Han Yin Poh,Lingli Liu,Calvin Xiu Xian Lee,Jia Rui Thong,Young Seon You,Wen Siang Lew

DOI: https://doi.org/10.1039/d3nh00554b

2024-03-08

Nanoscale Horizons

Abstract:The forefront of neuromorphic research strives to develop devices with specific properties, i.e. , linear and symmetrical conductance changes under external stimuli. This is paramount for neural network accuracy when emulating a biological synapse. A parallel exploration of resistive memory as a replacement for conventional computing memory ensues. In search of a holistic solution, the proposed memristive device in this work is uniquely poised to address this elusive gap as a unified memory solution. Opposite biasing operations are leveraged to achieve stable abrupt and gradual switching characteristics within a single device, addressing the demands for lower latency and energy consumption for binary switching applications, and graduality for neuromorphic computing applications. We evaluated the underlying principles of both switching modes, attributing the anomalous gradual switching to the modulation of oxygen-deficient layers formed between the active electrode and oxide switching layer. The memristive cell (1R) was integrated with 40 nm transistor technology (1T) to form a 1T–1R memory cell, demonstrating a switching speed of 50 ns with a pulse amplitude of ±2.5 V in its forward-biased mode. Applying pulse trains of 20 ns to 490 ns in the reverse-biased mode exhibited synaptic weight properties, obtaining a nonlinearity (NL) factor of 10 6 cycles, and their conductance states were also stable under temperature stress at 85 °C for 10 4 s. With the duality of the two switching modes, our device can be used for both memory and synaptic weight-storing applications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Harnessing a WOx-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computing

Debashis Panda,Yu-Fong Hui,Tseung-Yuen Tseng

DOI: https://doi.org/10.1039/d4nr01155d

IF: 6.7

2024-08-29

Nanoscale

Abstract:Transparent memristor-based neuromorphic synapses are expected to be specialised devices for high-speed information transmission and processing. The synaptic linearity and potentiation/depression cycles are imperative issues for the application of memristors. This work explores a memristor for improving switching uniformity by introducing a thin HfOx interfacial layer as a diffusion-limiting layer sandwiched between WOx and ITO bottom electrodes. An optimized HfOx thickness not only provides the best switching properties but also shows superior synaptic properties. The optimized 15 nm thin WOx layer can retain the memristor's excellence in P/D linearity, a cycling stability of 494 epochs and image recognition up to 3 mm bending, making it suitable for flexible devices. The artificial synapse is capable of reversible short-term and long-term learning behaviors confirmed by spike-timing-dependent-plasticity (STDP) results. X-ray photoelectron spectroscopy confirms the device composition and provides the oxygen vacancy concentration at the WOx/HfOx interface to realize the switching mechanism. The thicknesses of the different layers are estimated from the high-resolution transmission electron microscopy observations. The fabricated device exhibits 92.2% transparency, as confirmed by the UV-Vis spectrum.
Homo-layer hafnia-based memristor with large analog switching window

Na Bai,Baoyi Tian,Ge-Qi Mao,Kan-Hao Xue,Tao Wang,Jun-Hui Yuan,Xiaoxin Liu,Zhaonan Li,Shen Guo,Zuopai Zhou,Nian Liu,Hong Lu,Xiaodong Tang,Huajun Sun,Xiangshui Miao

DOI: https://doi.org/10.1063/5.0032556

IF: 4

2021-01-25

Applied Physics Letters

Abstract:The fast development of high-accuracy neuromorphic computing requires stable analog memristors. While filamentary memory switching is very common in binary oxides, their resistive switching usually involves abrupt changes due to the rupture or reformation of metallic filaments. In this work, we designed a memristor consisting of dual-layer HfOy/HfOx, with different concentrations of oxygen vacancies (y > x). During the electroforming process, both the migration of existing oxygen vacancies in HfOx and the generation of new oxygen vacancies in HfOy occur simultaneously, leaving a semiconducting part close to the HfOy/HfOx interface. The resulting filament is not metallic as a whole, as revealed by first principles calculations. Such a device demonstrates excellent switching uniformity as well as highly gradual resistance change, ideal for neuromorphic computing. Through fine tuning of the filament structure, the device achieves low variation, high speed, gradual SET and RESET processes, and hundreds of stable multi-level state behaviors. The long-term synaptic plasticity was further achieved, showing good linearity and large analog switching window (ΔG as high as 487.5 μS). This works affords a route toward a gradual resistance change in oxide-based memristors.

physics, applied
Enhanced Resistive Switching Performances of Mn-Doped BiFeO$_{\text{3}}$ Memristor by Introducing Oxygen Reservoir Interface

Rui Su,Danzhe Song,Runqing Zhang,Chenglin Shen,Min Cheng,Weiming Cheng,Yi Li,Xingsheng Wang,Xiangshui Miao

DOI: https://doi.org/10.1109/ted.2023.3308925

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:In this work, Mn-doped BiFeO3 (BFMO) is employed as the functional layer of the memristor, and the resistive properties of the BFMO-based conductive filament-type memristors are modulated by altering the bottom electrode material (SrRuO3 and TiN) of the device and designing the oxygen-deficient and oxygen-reserving interfaces. Compared to Au/BFMO/SRO memristors with the oxygen-deficient interface, the cycling stability, ON/ OFF ratio, retention properties, endurance performances, and multivalue characteristics of Au/BFMO/TiN memristors are improved significantly by introducing oxygen-reserving interfaces. In addition, BFMO memristors with oxygen-reserving interface show lower nonlinearity factors of long-term potentiation (LTP) and long-term depression (LTD) and demonstrate higher recognition accuracy of 98.82% in convolutional neural network (CNN) for the Mixed National Institute of Standards and Technology (MNIST) handwriting recognition. Furthermore, considering different line resistances between the two BFMO-based memristors, a 128 $\times $ 128 array was involved to investigate the influences of the line resistance problem on IR-drop and network recognition accuracy.

engineering, electrical & electronic,physics, applied
An Interface‐Type Memristive Device for Artificial Synapse and Neuromorphic Computing

Sundar Kunwar,Zachary Jernigan,Zach Hughes,Chase Somodi,Michael D. Saccone,Francesco Caravelli,Pinku Roy,Di Zhang,Haiyan Wang,Quanxi Jia,Judith L. MacManus-Driscoll,Garrett Kenyon,Andrew Sornborger,Wanyi Nie,Aiping Chen

DOI: https://doi.org/10.1002/aisy.202300035

IF: 7.298

2023-04-28

Advanced Intelligent Systems

Abstract:Reliable memristive switching devices are key components in the development of artificial neural networks for neuromorphic computers. Herein, a fully interface‐controlled memristive device with uniform, low power, forming‐free, and analog switching characteristics is demonstrated, where the device shows versatile biological synaptic functions with excellent uniformity, programmability, and reliability. Interface‐type (IT) metal/oxide Schottky memristive devices have attracted considerable attention over filament‐type (FT) devices for neuromorphic computing because of their uniform, filament‐free, and analog resistive switching (RS) characteristics. The most recent IT devices are based on oxygen ions and vacancies movement to alter interfacial Schottky barrier parameters and thereby control RS properties. However, the reliability and stability of these devices have been significantly affected by the undesired diffusion of ionic species. Herein, a reliable interface‐dominated memristive device is demonstrated using a simple Au/Nb‐doped SrTiO3 (Nb:STO) Schottky structure. The Au/Nb:STO Schottky barrier modulation by charge trapping and detrapping is responsible for the analog resistive switching characteristics. Because of its interface‐controlled RS, the proposed device shows low device‐to‐device, cell‐to‐cell, and cycle‐to‐cycle variability while maintaining high repeatability and stability during endurance and retention tests. Furthermore, the Au/Nb:STO IT memristive device exhibits versatile synaptic functions with an excellent uniformity, programmability, and reliability. A simulated artificial neural network with Au/Nb:STO synapses achieves a high recognition accuracy of 94.72% for large digit recognition from MNIST database. These results suggest that IT resistive switching can be potentially used for artificial synapses to build next‐generation neuromorphic computing.
Oxygen ion migration induced polarity switchable SrFeO x memristor for high-precision handwriting recognition

Rui Su,Ruizi Xiao,Chenglin Shen,Danzhe Song,Jiabao Chen,Bangda Zhou,Weiming Cheng,Yi Li,Xingsheng Wang,Xiangshui Miao

DOI: https://doi.org/10.1016/j.apsusc.2023.156620

IF: 6.7

2023-02-06

Applied Surface Science

Abstract:This paper reports a repeatable polarity reversal behavior in Au/SrFeO x (SFO)/SrRuO 3 (SRO) memristor. The set and reset voltage direction can be inverted by applying a suitable reverse bias voltage, and the SFO device always exhibits fine cycling stability and retention performance regardless of operation polarity. The cross-sectional transmission electron microscope (TEM) images of the SFO memristor on positive and negative set statuses display apparent perovskite SrFeO 3-δ (PV-SFO) conductive filaments and brownmillerite SrFeO 2.5 (BM-SFO) barrier layer, respectively. The surface oxygen atomic ratio characterized by X-ray photoelectron spectroscopy (XPS) demonstrates the oxygen ions migration behaviors during the polarity reversal processes. Moreover, the energy band structure evaluated by first-principles calculation suggests that insufficient oxygen injection into the BM-SFO barrier layer could reduce the band gap of BM-SFO and form a PV-SFO/BM-SFO + interface observed by TEM with the lower Schottky barrier height, facilitating Schottky emission and conduction. Furthermore, the SFO device on negative set status shows preferable handwritten digit recognition accuracy of 98.81 % and faster convergence speed than positive set status due to the better synaptic weight update linearity. Hence, the alternated polarity reversal features of the SFO memristor may provide a new reference for resistive memory and synaptic memristors.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Assessment of Power Generation Capacity of the Western Geopower Leasehold at The Geysers Geothermal Field, California

S. Sanyal,C. Klein,J. Mcnitt,R. Henneberger,K. MacLeod

Abstract:This paper presents a technical feasibility analysis of the Western Geopower Corporation’s (“WGP”) 25.5 MW Unit 1 power project at The Geysers steam field, California; the WGP leasehold covers 567 acres. A commercial power plant (P.G.E the plant was shut down and dismantled, and the wells were plugged and abandoned, mainly due to the unduly high rate of decline in well productivity then experienced throughout The Geysers field. A new geothermal power development at this site has several attractive attributes: (a) a long production history and a large amount of resource data are available; (b) a substantial infrastructure still exists intact at the site; and (c) the decline rates in reservoir pressure and well productivity throughout The Geysers field are far lower today than when the original plant operated. An assessment of the geological characteristics of the field indicates that at least 423 acres of the leasehold can potentially supply steam to a power plant. Based on the potentially productive acreage and the 10-year production history of the original wells, steam reserves within the leasehold are estimated to be sufficient to supply a 25.5 MW plant for a project life of at least 20 years.
Enhanced resistance switching in ultrathin Ag/SrTiO 3 /(La,Sr)MnO 3 memristors and their long-term plasticity for neuromorphic computing

Haihua Hu,Yuke Li,Yihao Yang,Wenxin Lv,Han Yu,Wencai Lu,Yuehang Dong,Zheng Wen

DOI: https://doi.org/10.1063/5.0053107

IF: 4

2021-07-12

Applied Physics Letters

Abstract:Neuromorphic computing is a promising candidate for next-generation information technologies. In the present work, we report the realization of long-term plasticity and synapse emulations in Ag/SrTiO3/(La,Sr)MnO3 memristors with the SrTiO3 active layers down to 3 unit cells (u.c.) in thickness. In the 3 u.c.-thick SrTiO3 device, efficient control of Ag+-ion migration gives rise to enhanced memristive properties with the conductance continuously modulated within a large memory window of ∼26 000% between an Ohmic low resistance state (LRS) and an electron-tunneling high resistance state (HRS). In addition, long-term plasticity of the Ag/SrTiO3/(La,Sr)MnO3 memristors is found to be dependent upon the resistance state. In the HRS, the devices exhibit excellent spike-timing-dependent plasticity characteristics with a large modulation of synaptic weight of ∼3500% and sensitive response to electrical stimuli of as low as ∼1.0 V and as fast as ∼0.01 ms. Adopting the spike-timing-dependent plasticity results as database, supervised learning simulations are demonstrated in the Ag/SrTiO3/(La,Sr)MnO3-based neural networks and a high accuracy rate of 95.5% is achieved for recognizing handwritten digits. These results provide more insights into the ionic migration at nanoscale for continuous resistance modulation and facilitate the design of ultrathin memristors for high-density 3D stacking artificial neural networks.

physics, applied
Diverse Long-Term Potentiation and Depression Based on Multilevel LiSiOxmemristor for Neuromorphic Computing.

Zeyu Wu,Zewen Li,Xin Lin,Xin Shan,Gang Chen,Chen Yang,Xuanyu Zhao,Zheng Sun,Kai Hu,Fang Wang,Tianling Ren,Zhitang Song,Kailiang Zhang

DOI: https://doi.org/10.1088/1361-6528/acf0c8

IF: 3.5

2023-01-01

Nanotechnology

Abstract:Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation is essential for implementing bioinspired neuromorphic systems. In this work, a memristor based on Pt/LiSiOx/TiN structure is developed to emulate an artificial synapse, which shows non-volatile multilevel resistance state memory behavior. Moreover, the high nonlinearity caused by abrupt changes in the set process is optimized by adjusting the initial resistance. 100 levels of continuously modulated conductance states are achieved and the nonlinearity factors are reduced to 1.31. The significant improvement is attributed to the decrease in the Schottky barrier height and the evolution of the conductive filaments. Finally, due to the improved linearity of the long-term potentiation/long-term depression behaviors in LiSiOxmemristor, a robust recognition rate (∼94.58%) is achieved for pattern recognition with the modified National Institute of Standards and Technology handwriting database. The Pt/LiSiOx/TiN memristor shows significant potential in high-performance multilevel data storage and neuromorphic computing systems.

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