Abstract:Neuromorphic computing, inspired by the brain's architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in artificial neural synapses. However, constructing high-quality epitaxial interfaces between metal and oxide semiconductors and designing modifiable contact barriers are challenging. Herein, we construct high-quality epitaxial metal/semiconductor interfaces based on the metallicity of the perovskite phase SrFeO3-δ (PV-SFO) and a small Schottky barrier in contact with Nb-doped SrTiO3 (NSTO). X-ray diffraction patterns, reciprocal space mapping results, and cross-sectional transmission electron microscopy images reveal that the prepared PV-SFO film exhibits a perfect single-crystal structure and an excellent epitaxial interface with the NSTO (111) substrate. The corresponding memristor exhibits analog-type resistive-variable characteristics with an ON/OFF ratio of ∼1000, stable data retention after 10,000 s, and no noticeable fluctuation in resistance after 10,000 pulse cycles. Electron energy loss spectroscopy, first-principles calculations, and electrical measurements reveal that compensating or restoring oxygen vacancies at the NSTO surface decreases or increases the contact barrier between PV-SFO and NSTO, respectively, thereby gradually regulating the resistance value. Furthermore, high-quality epitaxial PV-SFO/NSTO devices achieve up to 98.21% recognition accuracy for handwriting recognition tasks using LeNet-5-based network structures and 92.21% accuracy for color images using visual geometry group (VGG) network structures. This work contributes to the advancement of interface-type memristors and provides valuable insights into enhancing synaptic functionality in neuromorphic computing systems.

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MoS2 Memristors Exhibiting Variable Switching Characteristics Toward Biorealistic Synaptic Emulation.

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Controlling Sulfurization of 2D Mo2C Crystal for Mo2C/MoS2-based Memristor and Artificial Synapse

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Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications.

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System.

Direct Observation of Oxygen Ion Dynamics in a WO3‐x based Second‐Order Memristor with Dendritic Integration Functions

High-Performance 2D Ambipolar MoTe2 Lateral Memristors by Mild Oxidation

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS 2 for a Neuromorphic Vision System

Combination Of Conductive Filaments And Schottky Behavior In Multifunctional Sn1-Xcuxo2-Delta Memristor

Effect on Resistive Switching by Inserting TiOx Thin Layer in SiOx: Ag-Based Memristor

MoS2 Quantum Dot-Optimized Conductive Channels for a Conjugated Polymer-Based Synaptic Memristor.

Fabricating Molybdenum Disulfide Memristors