Abstract:Memristive switching in oxide semiconductors relies on the formation and disruption of conductive nano-filaments [1].This effect is considered promising for the next generation of non-volatile memories.Yet, the switching event is a complicated electronic and ionic process, which may involve more than one mechanism.In order to elucidate the switching mechanism, advanced microscopy investigations proved challenging because of heavily dependence of the results on specimen preparation techniques.Important information can be obtained if switching leads to a macroscopic change of nonelectrical properties, for instance magnetic properties.In this respect, n-type Mn-ZnO and p-type NiO provide a unique testbeds since the magnetic properties of these oxides are strongly dependent on the distribution of oxygen vacancies [2].We show that resistive switching in n-type ferromagnetic Mn-ZnO and p-type antiferromagnetic NiO coexists with a switching of the magnetic phase.Thin films of these oxides were sandwiched between two metallic electrodes and resistive switching was induced.Nano-devices were patterned out of the trilayers by resorting to electron beam lithography and physical etching.We found that a switching of the resistance corresponds to a switching of the magnetic phase in the film [3,4].By measuring the magnetic properties of the devices in the two resistive states, we can draw important conclusions on the underlying switching mechanism.For instance, in Mn-ZnO the effect is not filamentary type and occurs uniformly under the interface, whereas in NiO the effect is filamentary type.By measuring the change of magnetic properties we could exclude that switching was due to the formation of Ni-ion filaments across the device.We have demonstrated [4] that the switching is due to the formation and rapture of oxygen-vacancy filaments.

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

In-Situ TEM Observation of Resistive Switching Behaviors by in Nonvolatile Memory

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

Intrinsic Nanofilamentation in Resistive Switching

Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories

Analysis of Nano-Filament Evolution in Ni-based RRAM Devices Using In-Situ TEM

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Observation of conducting filament growth in nanoscale resistive memories

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories

Evolution of Ni Nanofilaments and Electromagnetic Coupling in the Resistive Switching of Nio

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Revealing the Nature of Nano-filaments in Memristive Oxide Memories

Resistive Switching of Au/ZnO/Au Resistive Memory: an in Situ Observation of Conductive Bridge Formation

Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule

Guiding the Growth of a Conductive Filament by Nanoindentation to Improve Resistive Switching

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation.

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Position detection and observation of a conducting filament hidden under a top electrode in a Ta₂O₅-based atomic switch.