Abstract:Recently, transient electronic devices play an indispensable role in modern disposable electronics and create potential application fields that cannot be addressed with conventional electronic devices or systems. However, the choice of transient materials has some limitations. It is therefore of great significance to explore transient electrodes, materials, and substrates that can undergo rapid and complete degradation on demand. In this work, the CsPbBr3 thin films as the switching layer are utilized to implement transient memory devices with a flexible Ag/CsPbBr3/PEDOT:PSS/ITO structure. This flexible nonvolatile memory device exhibits reproducible resistive switching performance, uniform switching voltages, concentrated distributions of high and low resistance states, and good mechanical stability over 50 bending times. The elemental mapping images of the memory device reveal that the resistive switching mechanism is interpreted through electrochemical formation/dissolution of metallic Ag filaments in CsPbBr3 layer. More importantly, it is demonstrated that the CsPbBr3 films and memory device can be dissolved rapidly in deionized water within 60 s, showing the transient characteristics. In addition, the optical and electrical properties disappear completely after the device dissolved in deionized water. This work demonstrates that the all‐inorganic perovskite CsPbBr3‐based transient memory devices have great potential for applications in secure data storage systems and disposable electronics.

Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1- Xbi Xi3 Perovskite-Based Memory Device.

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Low-Dimensional Lead-Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

Lead-free CsCu2Br3 perovskite for multilevel resistive switching memory

Lead-free CsCu<sub>2</sub>Br<sub>3</sub> perovskite for multilevel resistive switching memory

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

Investigation of Resistive Switching in Lead-Free Bismuth–silver Halide Double Perovskite

Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

Controllable Volatile-to-nonvolatile Memristive Switching in Single-Crystal Lead-Free Double Perovskite with Ultralow Switching Electric Field

Single Crystal Halide Perovskite Film for Nonlinear Resistive Memory with Ultrahigh Switching Ratio.

Dimer-type Cs3Sb2I9: an Efficient Perovskite Material for Low Operating Voltage and High Stability Flexible Resistive Switching Memory

Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device

Transient Resistive Switching Memory of CsPbBr3 Thin Films

Morphological Regulation of All-Inorganic Perovskites for Multilevel Resistive Switching

Two-Dimensional (c6h5c2h4nh3)2pbi4 Perovskite Single Crystal Resistive Switching Memory Devices

Air-stable Lead-Free Perovskite Thin Film Based on CsBi3I10 and Its Application in Resistive Switching Devices.

Enhanced Resistive Switching Performance Through Air-Stable Cu2AgSbI6 Thin Films for Flexible and Multilevel Storage Application

High-quality organic–inorganic lead-free bismuth halide perovskite film for resistive switching memory application

Enhanced Resistive Switching Performance In Yttrium-Doped Ch3nh3pbi3 Perovskite Devices