Abstract:ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher R-off/R-on ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.

On The Resistive Switching Mechanisms Of Cu/Zro2:Cu/Pt

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Nonpolar Nonvolatile Resistive Switching In Cu Doped Zro2

Resistive switching mechanism of Ag/ZrO 2 :Cu/Pt memory cell

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Stable Nonpolar Resistive Switching Characteristics in Cu/Cu-dispersed ZrO2/Pt Memory Devices

Resistive Switching Properties and Failure Behaviors of (pt, Cu)/Amorphous ZrO2/Pt Sandwich Structures

Nonpolar Nonvolatile Resistive Switching in Cu Doped <formula formulatype="inline"> <tex>$\hbox{ZrO}_{2}$</tex></formula>

Bistable Resistance Switching of Cu/Ti:ZrO2/Pt for Nonvolatile Memory Application

Bipolar and Tri-State Unipolar Resistive Switching Behaviors in Ag/ZnFe2O4/Pt Memory Devices

Switching Mechanism Transition Induced by Annealing Treatment in Nonvolatile Cu/Zno/Cu/Zno/Pt Resistive Memory: from Carrier Trapping/Detrapping to Electrochemical Metallization

Resistive Switching Properties and Physical Mechanism of Cobalt Ferrite Thin Films

Resistive switching characteristics of Ti/ZrO2/Pt RRAM device

Single-crystalline Metal Filament-Based Resistive Switching in a Nitrogen-Doped Carbon Film Containing Conical Nanopores

Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu/ZrO2/Pt devices

Mechanism For Resistive Switching In An Oxide-Based Electrochemical Metallization Memory

The Unification of Filament and Interfacial Resistive Switching Mechanisms for Titanium Dioxide Based Memory Devices

CuO/ZnO Memristors Via Oxygen or Metal Migration Controlled by Electrodes

Low-Power and Highly Uniform Switching in $ \hbox{zro}_{2}$ -Based ReRAM with a Cu Nanocrystal Insertion Layer

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories