Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor
Pengtao Li,Ziyang Zhang,Zijian Wang,Guobin Zhang,Shengpeng Xing,Zhen Wang,Xuemeng Fan,Zhejia Zhang,Qi Luo,Yishu Zhang
DOI: https://doi.org/10.1109/icicdt63592.2024.10717633
2024-01-01
Abstract:The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching their limits, making next-generation solutions crucial. In this letter, we explore dual-layer oxide memristors of $\text{SiN}_{X}$ and ZnO for applications in volatile and non-volatile resistive switching memory. We demonstrated the reversible transition between volatile and non-volatile behaviors by controlling the current compliance. In the non-volatile state, the device exhibits low set and reset voltages of 0.23 V and -0.24 V, respectively. Finally, we provided a mechanistic explanation consistent with dual-layer oxide memristors and conducted a fitting of the conduction mechanism.