Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Endurance Enhancement Of Cu-Oxide Based Resistive Switching Memory With Al Top Electrode

Physical Mechanisms and Enhancement of Endurance Degradation of SiOx:Ag-based Volatile Memristors

Physical mechanisms of endurance degradation in TMO-RRAM

Analytic Model Of Endurance Degradation And Its Practical Applications For Operation Scheme Optimization In Metal Oxide Based Rram

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Oxygen-induced Bi-Modal Failure Phenomenon in SiOx-based Resistive Switching Memory

Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory.

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

The effect of oxygen affinity electrode Ti on the performance of vanadium oxide-based valence change resistive random access memory

Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications

Influence of Metal Electrode on the Performance of ZnO Based Resistance Switching Memories

Annealed AlOx Film with Enhanced Performance for Bipolar Resistive Switching Memory

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Insight into Effects of Oxygen Reservoir Layer and Operation Schemes on Data Retention of HfO2-Based RRAM