Abstract:Ferroelectric materials, characterized by their polarization switching capabilities, have emerged as promising candidates for non-volatile memory applications due to their fast operation speeds, low switching energies, and remarkable scalability. Among these, hafnia-based ferroelectrics are particularly noted for their compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, the development of high-quality ferroelectricity in ultra-thin films, essential for low-voltage operations and high-density integrations, remains challenging. This study introduces a novel low-damage metallization process designed to fabricate ultra-thin (sub-5 nm) ferroelectric films exhibiting exceptional ferroelectric properties and reliability. The process, compatible with standard CMOS techniques, achieves a significant remnant polarization ( P r ) of 40 μC cm −2 and low leakage currents, alongside enhanced retention characteristics. Crucially, it substantially mitigates the wake-up effect, often attributed to oxygen vacancy redistribution at the interface. Through comprehensive analyses utilizing electron energy loss spectroscopy (EELS), geometric phase analysis (GPA) and X-ray photoelectron spectroscopy (XPS), we demonstrate that our process effectively reduces oxygen vacancies and dislocations at the top interface of the ferroelectric film. The enhanced reliability of ferroelectric random-access memory (FeRAM), evidenced by improved sensing margins and consistency in ferroelectric properties, marks a substantial improvement over the conventional method. To precisely measure reliability characteristics, we propose a new retention model that considers charge screening over time. Moreover, circuit-level simulations via non-volatile memory simulator (NVSim) validate the process's integration potential with existing CMOS technologies, affirming its suitability for advanced, high-density memory configurations without compromising performance or energy efficiency. The findings from this study pave the way for broader applications of nanoscale high-quality dielectric thin films, extending beyond ferroelectric materials to various technological domains requiring advanced material solutions.

Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Defect engineering for control of wake-up effect in HfO2-based ferroelectrics

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Ferroelectric and electric field cycling properties of un-doped HfO2 films