Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Temperature Instability of Resistive Switching on <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula>-Based RRAM Devices

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

The Temperature Dependence in Nanoresistive Switching of HfAlO

Temperature Instability of Resistive Switching on $ \hbox{hfo}_{x}$ -Based RRAM Devices

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

Self-compliance Pt/HfO2/Ti/Si One-Diode–one-resistor Resistive Random Access Memory Device and Its Low Temperature Characteristics

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory.

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Resistive Switching Mechanisms Relating to Oxygen Vacancies Migration in Both Interfaces in Ti/Hfox/Pt Memory Devices

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories

Resistive Switching of Hfo2 Based Flexible Memories Fabricated by Low Temperature Atomic Layer Deposition

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study

Metallic to Hopping Conduction Transition in Ta2O5−x/TaOy Resistive Switching Device

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

The heavy ion radiation effects on the Pt/HfO<inf>2</inf>/Ti resistive switching memory