Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

The heavy ion radiation effects on the Pt/HfO<inf>2</inf>/Ti resistive switching memory

The Heavy Ion Radiation Effects On The Pt/Hfo2/Ti Resistive Switching Memory

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Highly Stable Radiation-Hardened Resistive-Switching Memory

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Investigation on the Response of TaO $_{\rm X}$ -Based Resistive Random-Access Memories to Heavy-Ion Irradiation

Effect of TiO<inf>x</inf> Film Thickness on Resistive Switching Behavior of TiN/TiO<inf>x</inf>/HfO<inf>2</inf>/Pt RRAM Device

Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.

Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations

Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance

Resistive Switching Mechanisms Relating to Oxygen Vacancies Migration in Both Interfaces in Ti/Hfox/Pt Memory Devices

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Effect Of Tiox Film Thickness On Resistive Switching Behavior Of Tin/Tiox/Hfo2/Pt Rram Device

Resistive Switching Properties of HfO[sub 2]-Based ReRAM with Implanted Si/Al Ions

Three-state resistive switching in HfO 2 -based RRAM