Abstract:The accumulation and motion of metal ions in the ferroelectric oxide and layered dichalcogenides play a critical role in the development of nonvolatile, adaptive memories for applications in neuromorphic computing. To further simplify and control this fundamental process in electronic devices, anion conductors based memristor is first developed by using layered double hydroxide (LDH) as the active materials, where the intercalated ions in subatomic interlayer have superior ion conductivity exhibiting memristive effect. The results show that LDH memristors exhibit abnormal resistive switching behavior with ON/OFF ratio up to 105 at room temperature with the set/reset voltage distribution of 0.3 V. Further studying reveals that the LDH memristior shows stable abnormal unipolar characteristics, following the space‐charge‐limited current transport theory. In situ conductive atomic force microscopy measurements visualize the formation of conductive channels under external bias and significantly reveal the linear correlation between set voltage and the thickness of LDH with the slope of 0.13 V per molecular layer. The results indicate ions may play the key role in realizing set and reset process. The newly reported resistive switching behavior of LDH may shed lights on the development of more intercalated 2D materials based memristor. The anion conductor based memristors are first investigated with abnormal unipolar resistive switching behavior. The lamellar feature of layered double hydroxide (LDH) endows the construction of ultrathin memristive configuration, exhibiting superior switching ratio and high durability. Both space‐charge‐limited current transport simulation and in situ conductive atomic force microscopy (C‐AFM) measurements suggest the unique conduction mechanism, revealing the potential for intercalated 2D materials in electronic devices.

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Introduction of Defects in Hexagonal Boron Nitride for Vacancy-Based 2D Memristors.

A Sub-500 Mv Monolayer Hexagonal Boron Nitride Based Memory Device

Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride

Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by Van Der Waals Integration

Robust memristors based on layered two-dimensional materials

Two-dimensional Hexagonal Boron Nitride Based Memristor

Thinnest Nonvolatile Memory Based on Monolayer H-Bn

Ultrathin Anion Conductors Based Memristor

Ultralow Off‐State Current and Multilevel Resistance State in Van Der Waals Heterostructure Memristors

Observation of Resistive Switching in a Graphite/hexagonal Boron Nitride/graphite Heterostructure Memristor

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Floating-gate memristor based on a MoS2/h-BN/AuNPs mixed-dimensional heterostructure

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Effect of the Coexistence of Active Metals and Boron Vacancies on the Performance of 2D Hexagonal Boron Nitride Resistance Memory

Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor

Defect Engineering in Multilayer H-Bn Based RRAM by Localized Helium Ion Irradiation

A Leaky Integrate-and-Fire Neuron Based on Hexagonal Boron Nitride (h-BN) Monocrystalline Memristor

Transfer-Free Analog and Digital Flexible Memristors Based on Boron Nitride Films

Homo-layer hafnia-based memristor with large analog switching window