Abstract:Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductors industry 1-2 . However, most studies in this field have been limited to the fabrication and characterization of isolated large (>1μm 2 ) devices on unfunctional SiO 2 /Si substrates. Some studies integrated monolayer graphene on silicon microchips as large-area (>500μm 2 ) interconnection 3 and as channel of large transistors (~16.5μm 2 ) 4-5 , but in all cases the integration density was low, no computation was demonstrated, and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here we present the fabrication of high-integration-density 2D/CMOS hybrid microchips for memristive applications — CMOS stands for complementary metal oxide semiconductor. We transfer a sheet of multilayer hexagonal boron nitride (h-BN) onto the back-end-of-line (BEOL) interconnections of silicon microchips containing CMOS transistors of the 180nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the h-BN memristors, which allows us to achieve endurances of ~5 million cycles in memristors as small as ~0.053μm 2 . We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity (STDP) signals that are suitable for the implementation of spiking neural networks (SNN). The high performance and the relatively-high technology readiness level achieved represent a significant advance towards the integration of 2D materials in microelectronic products and memristive applications.

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Thinnest Nonvolatile Memory Based on Monolayer H-Bn

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

Introduction of Defects in Hexagonal Boron Nitride for Vacancy-Based 2D Memristors.

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Ultralow Off‐State Current and Multilevel Resistance State in Van Der Waals Heterostructure Memristors

Atomically Thin Femtojoule Memristive Device

Ultra-fast switching memristors based on two-dimensional materials

Two-dimensional Hexagonal Boron Nitride Based Memristor

Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride

Observation of Resistive Switching in a Graphite/hexagonal Boron Nitride/graphite Heterostructure Memristor

Hybrid 2D/CMOS microchips for memristive applications

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

High On/off Ratio Black Phosphorus Based Memristor with Ultra-Thin Phosphorus Oxide Layer

Atomically-thin Femtojoule Filamentary Memristor

Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor

Low-Power Memristor Based on Two-Dimensional Materials

Flexible Boron Nitride-Based Memristor Forin Situdigital and Analogue Neuromorphic Computing Applications

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing