Abstract:Through introducing Fc and PDI repeats into polymeric backbone, polymer P(DTPDI‐Fc) is designed to weaken stacking defects. P(DTPDI‐Fc) films show a regioregular molecular stacking and a continuous surface morphology, highly advantageous to the charge carriers inject and transport throughout P(DTPDI‐Fc) films. Therefore, P(DTPDI‐Fc) devices exhibit low ON‐state current, stable threshold voltage, long‐time stability, and high device reproducibility. Polymeric materials have been widely researched and used as active‐layers to fabricate data‐storage resistance random‐access memory (ReRAM) devices. Nevertheless, the problems as drift voltage, weak stability, and low reproducibility largely restrict their practical application in next‐generation memory systems, mainly induced by the molecular stacking defects that limited the efficient charge‐carrier migration throughout the active‐layers. Thus, how to weaken the molecular stacking defects and thus improve the overall ReRAM performance is a scientific issue that needs to be solved urgently. In this work, an organometallic polymer 5,12‐di(thiophen‐2‐l)‐2,9‐di(tridecan‐7‐yl)anthra[2,1,9‐def:6,5,10‐d'e'f']diisoquinoline‐1,3,8,10(2H,9H)‐tetraone P(DTPDI‐Fc) is designed with ferrocene (Fc) and perylenediimide (PDI) building repeats. The X‐ray diffraction (XRD) test confirms the regioregular stacking styles of P(DTPDI‐Fc) in solid states, and atomic force microscope (AFM) measurement verified the continuous and smooth surface morphology of P(DTPDI‐Fc) films. Therefore, the charge carriers can easily inject into P(DTPDI‐Fc) film and can efficiently migrate throughout P(DTPDI‐Fc) films. Thus, P(DTPDI‐Fc) devices show excellent memory behaviors with low high‐conductance state ON‐state current, stable threshold voltage, long‐time stability, and high device reproducibility. This work affords a practical strategy to weaken molecular stacking defects and to improve stacking regioregularity, which will give a guidance for the designing of multilevel data‐storage ReRAM devices in future researches.

Two-dimensional triphenylamine-based polymers for ultrastable volatile memory with ultrahigh on/off ratio

A Robust Nonvolatile Resistive Memory Device Based on a Freestanding Ultrathin 2D Imine Polymer Film

Light-/steam-driven Polymeric Crosslinking with Porous Multistructure Pattern for Ultrastable and Fast-Speed Memory

A carbonyl-decorated two-dimensional polymer as a charge-trapping layer for non-volatile memory storage devices with a high endurance and wide memory window

A New DRAM-type Memory Devices Based on Polymethacrylate Containing Pendant 2-Methylbenzothiazole

Improving Resistive Switching Characteristics of Polyimide-Based Volatile Memory Devices by Introducing Triphenylamine Branched Structures

Thermally Stable Polymer Memory Devices Based on a Π-Conjugated Triad

One-dimensional Π-D Conjugated Coordination Polymers: Synthesis and Their Improved Memory Performance

Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High Performance Flash Memory.

Building Uniformly Structured Polymer Memristors Via a 2D Conjugation Strategy for Neuromorphic Computing.

Large-area multilayer molybdenum disulfide for 2D memristors

1D Π‐d Conjugated Coordination Polymers for Multilevel Memory of Long‐Term and High‐Temperature Stability

90% Yield Production of Polymer Nano-Memristor for In-Memory Computing

Building Uniformly Structured Polymer Memristors Via a Two‐Dimensional Conjugation Strategy for Neuromorphic Computing

Synthesis and non-volatile electrical memory characteristics of triphenylamine-based polyimides with flexibility segments

Reduced Graphene Oxide Electrodes with Wrinkled Surface for Nonvolatile Polymer Memory Device Compatibility

A Conjugated Polymer Bearing Perylenediimide (PDI) and Ferrocene (Fc) Exhibiting Stable Data‐Storage Performance

Transient and Flexible Polymer Memristors Utilizing Full-Solution Processed Polymer Nanocomposites.

Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory Array

A Universal Strategy for Stretchable Polymer Nonvolatile Memory via Tailoring Nanostructured Surfaces

A Highly Crystalline Single Layer 2D Polymer for Low Variability and Excellent Scalability Molecular Memristors