Abstract:Future flexible electronic systems require memory devices combining low power consumption and mechanical bendability. However, high programming/erasing (P/E) voltages, which are universally required to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a novel route to achieve a low-voltage programmable/erasable flexible Fe-OFET NVM. Ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [(VDF-TrFE-CTFE)], rather than the conventional ferroelectric copolymer poly(vinylidene-fluoride-trifluoroethylene) [(VDF-TrFE)], is used as the gate dielectric. The low coercive field of P(VDF-TrFE-CTFE) is the main contribution to the low-voltage operation in the Fe-OFET NVM, even with a relative thick ferroelectric gate dielectric layer. By depositing a long-chain alkane molecule Tetratetracontane (TTC) as the passivation layer on the surface of P(VDF-TrFE-CTFE) film, the layer-by-layer growth mode of semiconductor pentacene is obtained, which results in a large crystalline grain and good interface morphology at the channel/dielectric. Therefore, the mobility of Fe-OFET NVMs is greatly improved. As a result, a high performance flexible Fe-OFET NVM is achieved, with a low P/E voltage of +/- 15 V, high mobility up to 0.5 cm(2) V-1 s(-1), reliable P/E endurance property over 1000 cycles, stable data storage retention capability over 6000 s, and excellent mechanical bending durability without visible degradation after 2000 repetitive tensile bending cycles at a small curvature radius of 4.0 mm.

P(Vdf-Trfe-Cfe) Terpolymer Thin-Film for High Performance Nonvolatile Memory

Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories

Defect-mediated Polarization Switching in Ferroelectric Films for Low-Power-consuming and Ultra-High-density Memories

Fast Switching Protocol For Ferroelectric Random Access Memory Based On Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Ultrathin Films

Low-voltage Programmable/erasable High Performance Flexible Organic Transistor Nonvolatile Memory Based on a Tetratetracontane Passivated Ferroelectric Terpolymer

Ordered Arrays of A Defect-Modified Ferroelectric Polymer for Non-Volatile Memory with Minimized Energy Consumption

A Feasible Heterostructure of P(VDF-TrFE)/semiconductor for a Stable Multi-State Memory

Study on Multilevel Memory Based on Ferroelectric Polymer P(VDF-TrFE)

Self-polarized Poly(vinylidene Fluoride) Ultrathin Film and Its Piezo/Ferroelectric Properties

The Preparation and Ferroelectric Properties of Defect-Free Ultrathin Films of Vinylidene Fluoride Oligomer

Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics

Unipolar Poling-Induced High Switching Speed And Improved Imprint Behaviors For Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Ultrathin Films

Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films

Low-voltage Organic Ferroelectric Field Effect Transistors Using Langmuir–Schaefer Films of Poly(vinylidene Fluoride-Trifluororethylene)

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer.

Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Facile Fabrication of Highly Ordered Poly(Vinylidene Fluoride-Trifluoroethylene) Nanodot Arrays for Organic Ferroelectric Memory

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

Polyfluorene-based push-pull type functional materials for write-once-read-many-times memory devices