Abstract:Organic nonvolatile memory with low power consumption is a critical research demand for next-generation memory applications. Ferroelectric switching characteristics of poly(vinylidene fluoride) (PVDF) thin films modified with a trace amount of hydrated Cu salt (CuCl2·2H2O) are explored in the present study. Herein, a Cu salt-mediated PVDF (Cu/PVDF) thin film with preferential edge-on β-crystallites is fabricated through the orientation-controlled spin coating (OCSC) technique. This work proposes a convenient and effective approach to produce edge-on-oriented electroactive PVDF thin films with a high degree of polar β-phase, so as to realize the favorable switching under low operating voltages. Herein, chemically modified PVDF is anticipated to form a complex intermediate, which attains its stability by undergoing favorable hydrogen bonding that reorients the C-C structure of PVDF to obtain the β-conformation. Such information is verified by X-ray photoelectron spectroscopy (XPS). Grazing incidence Fourier transform infrared (GI-FTIR) spectroscopy revealed that the Cu salt incorporated into the PVDF matrix favored the formation of the electroactive β-phase with edge-on crystallite lamellae. Consequently, the Cu/PVDF thin film demonstrates a good contrast between electric field-assisted written and erased data bits in the piezoresponse force microscopy (PFM) phase image. Furthermore, to obtain the ferroelectric memory window, a metal-ferroelectric-insulator-semiconductor (MFIS) diode with Cu/PVDF as a ferroelectric layer has been fabricated. The capacitance-voltage (C-V) characteristic of the MFIS diode exhibits a memory window of 12 V with a long-term retention behavior (∼longer than 7 days). In a nutshell, we tried to represent a clear understanding of the interfacial interactions of the Cu salt with PVDF, which favor the edge-on formation that results in the promising low-voltage ferroelectric switching and excellent retention response, where any additional electrical poling and/or external stretching is completely possible to be ruled out, thus offering a new prospect for the evolution of devices with long-lasting nonvolatile memories.

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Facile Fabrication of Highly Ordered Poly(Vinylidene Fluoride-Trifluoroethylene) Nanodot Arrays for Organic Ferroelectric Memory

Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories

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Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate Insulator

Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene Fluoride)-Based Flexible Nanocomposites

Field-effect transistor memories based on ferroelectric polymers

Electrical Fatigue in Ferroelectric P(VDF-TrFE) Copolymer Films

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

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Ferroelectric Polymer Nanostructure with Enhanced Flexoelectric Response for Force-Induced Memory

Flexible Robust and High-Density FeRAM from Array of Organic Ferroelectric Nano-Lamellae by Self-Assembly.

Tuning Ferroelectricity of Polymer Blends for Flexible Electrical Energy Storage Applications

Hydrogen Bonding-Assisted Complete Ferroelectric β-Phase Conversion in Poly(vinylidene fluoride) Thin Films: Exhibiting an Excellent Memory Window and Long Retention

High-Resolution Structural Mapping And Single-Domain Switching Kinetics In 2d-Confined Ferroelectric Nanodots For Low-Power Feram

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Van der Waals engineering of ferroelectric heterostructures for long-retention memory