Abstract:The probe-based seek-and-scan data storage system is an ideal candidate for future ultrahigh-density (> 1 Tbit/ inch2) nonvolatile memory devices (Vettiger et al., 2002; Pantazi et al., 2008; Hamann et al., 2006; Ahn et al., 1997; Cho et al., 2003; Cho et al., 2005; Ahn et al., 2004; Cho et al., 2006; Heck et al., 2010). In such a system, an atomic force microscope (AFM) probe (or an array of AFM probes) is used to write and read data on a nonvolatile medium; the bit size depends mainly on the radius of the probe tip. Moreover, the storage area is not defined by lithography like in SSDs, but rather by the movement of the probes. Thus improving the probe motion control to the tenth of a distance can translate into two orders of magnitude higher density. Bit size as small as 5 nm and a storage density in the Tbit/ in2 regime with data rate comparable to flash technology have been achieved (Cho et al., 2005; Cho et al., 2006). Unlike SSD technology which requires new lithographic and fabrication tools for each new generation, manufacturing of the probe-based device can be achieved using existing low-cost semiconductor equipment, which can reduce the price of these devices considerably. Another advantage of probe-based memory is that the mechanism to move the probes is low power, which reduces power consumption and heat dissipation in comparison to HDD devices. While various writing mechanisms have been proposed for probe-based storage, e.g., thermomechanical and thermal writings on polymeric and phase-change media (Vettiger et al., 2002; Pantazi et al., 2008; Hamann et al., 2006), a great deal of attention has recently been devoted to the electrical pulse writing on ferroelectric films due to the non-structuredestructive nature of the write-erase mechanism (Ahn et al., 1997; Cho et al., 2003; Cho et al., 2005; Ahn et al., 2004; Cho et al., 2006; Heck et al., 2010). When a short electrical pulse is applied through a conductive probe on a ferroelectric film, the highly concentrated electric field can invert the polarization of a local film volume, resulting in a nonvolatile ferroelectric domain that is the basis of data recording. This mechanism allows for longer medium lifetime, i.e., larger number of write-erase cycles that is comparable to hard disk drives, faster write and read times (Forrester et al., 2009), smaller bit size (Cho et al. (2006) and higher storage densities (Cho et al. (2006). Although the probe-based storage technology based on ferroelectric media has shown great promise, no commercial product has yet reached the market. This is mainly due to

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