Abstract:Resistive switching materials and devices have received unparalleled recent attention due their potential and demonstrated use as resistive random access memory (RRAM) and neuromorphic applications. Resistive switching or memristive materials can serve as two-terminal electrical components where the resistance is a function of the amount and direction of current previously experienced and therefore they can uniquely emulate biological synapse behavior. HfO2 is a well-known dielectric and memristive material that has been previously explored for RRAM applications. Here, to better understand the resistive switching in harfnia in the presence of insulating interfaces, the electrical properties of HfO2/ZrO2 nanolayer stacks are discussed. The stacks with total thickness of 16 nm were prepared on platinized Si substrates using atomic layer deposition (ALD). A capping layer of TiN (30 nm thick) and a Au top electrode (100 nm thick) were sputtered to complete the device. We will discuss the current-voltage behavior, pulse time mode measurements, retention and endurance tests of the devices. Resistive switching was observed in all multilayer samples, with the set voltage (Vset) decreasing with increasing number of layers (i.e., number of hafnia-zirconia interfaces). We will show that grazing incidence x-ray diffraction (GI-XRD) demonstrated the transition of the hafnia phase from monoclinic to orthorhombic structure during the post metallization annealing, and that shifts in the binding energy of the x-ray photoelectron spectroscopy spectra (XPS) imply the existence of hafnia suboxide (HfO2-δ). More importantly, we will show how memristive/insulating nanostructures like nanolayered HfO2/ZrO2 can help modulate the resistive switching of memristive-based devices, to include for example, a two-step electroforming process, and multistate resistive switching.

Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition.

An Electronic Synaptic Device Based on HfO2TiOx Bilayer Structure Memristor with Self-Compliance and Deep-Reset Characteristics.

Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching

Homo-layer hafnia-based memristor with large analog switching window

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor

Forming-Free, Fast, Uniform, and High Endurance Resistive Switching from Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

Dual-Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

Sub-10 Nm Ta Channel Responsible For Superior Performance Of A Hfo2 Memristor

Characteristics of Multilevel Storage and Switching Dynamics in Resistive Switching Cell of Al2O3/HfO2/Al2O3 Sandwich Structure

MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe2O3 Memristor

Customized Binary and Multi-Level HfO2−x-based Memristors Tuned by Oxidation Conditions

Synaptic Functions and a Memristive Mechanism on Pt/AlO X /hfo X /tin Bilayer-Structure Memristors

Resistive Switching in Atomic Layer Deposited HfO2/ZrO2 Nanolayer Stacks

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film.

Coexistence of Digital and Analog Resistive Switching with Low Operation Voltage in Oxygen-Gradient HfO X Memristors

Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Resistive switching in atomic layer deposited HfO<sub>2</sub>/ZrO<sub>2</sub> nanolayer stack