Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Forming-Free, Fast, Uniform, and High Endurance Resistive Switching from Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition.

Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor

Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

Annealed AlOx Film with Enhanced Performance for Bipolar Resistive Switching Memory

Truly Electroforming‐Free Memristor Based on TiO 2 ‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

High Switching Endurance in Taox Memristive Devices

Self-rectifying TiOx-based memristor with synaptic plasticity

High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3

Resistive Switching Behavior of Ag/La0.67Sr0.33MnO3/Pt Heterostructures

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

Sub-10 Nm Ta Channel Responsible For Superior Performance Of A Hfo2 Memristor

Homo-layer hafnia-based memristor with large analog switching window

Robust memristors based on layered two-dimensional materials

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Forming-free and Self-Rectifying Resistive Switching of the Simple Pt/TaOx/n-Si Structure for Access Device-Free High-Density Memory Application.

Unipolar Resistive Switching Characteristics And Scaling Behaviors In La2mo2o9 Thin Films For Nonvolatile Memory Applications