Abstract:A multi‐layer HfOx memristor with a "V" type oxygen vacancy (Vo) distribution is created to mimic the function of Ca2+ during synaptic information transmission. By adjusting voltage and compliance current (Icc), the HfOx memristor can open or close different levels, a mathematical model describes this behavior, forming a controllable 'hourglass' CF, achieving precise filament control and good device performance for synapse simulation. The development of an artificial synaptic device is essential for the construction of a brain‐like neuromorphic computing architecture. In this study, the goal is to create a multi‐layer HfOx memristor with a "V" type oxygen vacancy (Vo) distribution to mimic the function of calcium ions (Ca2+) during synaptic information transmission. By adjusting voltage and compliance current (Icc), the HfOx memristor can open or close different levels of volt‐controlled Ca2+ channels, thus enabling the replication of synaptic structure, neurotransmitter release/acceptor, and information transmission. A mathematical model is adopted to describe the behavior of volt‐controlled Ca2+ channels, which demonstrates that the device exhibits consistent characteristics with biological synapses. The device forms an "hourglass" conductive filament (CF) within its middle functional layer, allowing for precise control over filament formation and positioning. This results in ultra‐low power consumption for erasing (581 fJ), fast erasing speed (10 ns), and a low resistance difference coefficient of only 1.8%. Furthermore, the device successfully simulates the physical dynamics of Ca2+ during short‐term potentiation (STP) and long‐term potentiation (LTP) in biological synapses while replicating various guided synaptic behaviors. This study provides a straightforward method for memristors to realize bio‐realistic artificial neuromorphic applications.

Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement

Harnessing a WOx-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computing

Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor

HfAlO-based Ferroelectric Memristors for Artificial Synaptic Plasticity

Synaptic Functions and a Memristive Mechanism on Pt/AlO X /hfo X /tin Bilayer-Structure Memristors

Highly flexible and robust HfO<sub>x</sub>-based memristor for wearable in-memory computing

Improved memory and synaptic device performance of HfO 2 -based multilayer memristor by inserting oxygen gradient TiO x layer

In-Depth Physical Mechanism Analysis and Wearable Applications of HfO x-Based Flexible Memristors

Customized Binary and Multi-Level HfO2−x-based Memristors Tuned by Oxidation Conditions

Homo-layer hafnia-based memristor with large analog switching window

Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor

Implementing a Type of Synaptic Coupling Between Excitatory and Inhibitory Cells by Using Pt/Poly(3,4-ethylenedioxythiophene):Polystyrenesulfonate/HfOx/Pt Memristive Structure

HfO2:Gd-based ferroelectric memristor as bio-synapse emulators

Hf0.5Zr0.5O2-based Ferroelectric Memristor with Multilevel Storage Potential and Artificial Synaptic Plasticity

An Electronic Synaptic Device Based on HfO2TiOx Bilayer Structure Memristor with Self-Compliance and Deep-Reset Characteristics.

In-depth Conduction Mechanism Analysis of Programmable Memristor and Its Biosynaptic Applications

Research on Electronic Synaptic Simulation of HfO2-based Memristor by Embedding Al2O3

Flexible Ta/TiO x /TaO x /Ru memristive synaptic devices on polyimide substrates

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO X /zno X /tin Memristive System

Bio‐Realistic Synaptic‐Replicated "V" Type Oxygen Vacancy Memristor

Enhanced Resistive Switching Uniformity in HfO2/TiO2 NWA Memristor for Synaptic Simulation