Flexible, Transparent And Wafer‐scale Artificial Synapse Array Based on TiOx/Ti3C2Tx Film for Neuromorphic Computing
Junhua Huang,Shaodian Yang,Xin Tang,Leilei Yang,Wenjun Chen,Zibo Chen,Xinming Li,Zhiping Zeng,Zikang Tang,Xuchun Gui
DOI: https://doi.org/10.1002/adma.202303737
IF: 29.4
2023-06-21
Advanced Materials
Abstract:High‐density neuromorphic computing memristor array based on two‐dimensional (2D) materials paves the way for next‐generation information‐processing components and in memory computing systems. However, the traditional two‐dimensional materials‐based memristor devices are suffered from poor flexibility and opacity, which hinders the application of memristors in flexible electronics. Here, a flexible artificial synapse array based on TiOx/Ti3C2Tx film is fabricated by convenient and energy‐efficient solution‐processed technique, which realizes high transmittance (∼90%) and oxidation resistance (>30 days). The TiOx/Ti3C2Tx memristor shows low device‐to‐device variability, long memory retention and endurance, high ON/OFF ratio and fundamental synaptic behavior. Furthermore, satisfactory flexibility (R = 1.0 mm) and mechanical endurance (104 bending cycles) of the TiOx/Ti3C2Tx memristor is achieved, which is superior to other film memristors prepared by chemical vapor deposition. In addition, high‐precision (>96.44%) MNIST handwritten digits recognition classification simulation indicates that TiOx/Ti3C2Tx artificial synapse array holds promise to future neuromorphic computing applications, and provides excellent high‐density neuron circuits for new flexible intelligent electronic equipment. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology