Abstract:The common nonpolar switching behavior of binary oxide-based resistive random access memory devices (RRAMs) has several drawbacks in future application, such as the requirements for a high forming voltage, a large reset current, and an additional access device to settle the sneak-path issue. Herein, we propose the tuning of the switching behavior of binary oxide-based RRAMs by inserting an ultra-thin chemically active metal nanolayer, and a case study on Ta2O5-Ta systems is provided. The devices are designed to be Pt/Ta2O5(5 - x/2)/Ta(x)/Ta2O5(5 - x/2)/Pt with x = 0, 2, or 4 nm. The reference devices without the Ta nanolayer exhibit an expected nonpolar switching behavior with a high forming voltage of similar to-4.5 V and a large reset current of >10 mA. In contrast, a self-compliance bipolar switching behavior with a low forming voltage of similar to-2 V and a small reset current of <1 mA is observed after inserting a 2 nm Ta nanolayer. When the Ta nanolayer is increased to 4 nm, a complementary resistive switching (CRS) behavior is found, which can effectively settle the sneak-path issue. The appearance of CRS behavior suggests that a thin Ta nanolayer of 4 nm is robust enough to act as an inner electrode. Besides, the behind switching mechanisms are thoroughly discussed with the help of a transmission electron microscope and temperature-dependent electrical measurements. All these results demonstrate the feasibility of tuning switching behavior of binary oxide-based RRAMs by inserting an ultra-thin chemically active metal nanolayer and might help to advance the commercialization of binary oxide-based RRAMs.

Unipolar $\hbox{tao}_{x}$ -Based Resistive Change Memory Realized with Electrode Engineering

Unipolar <formula formulatype="inline"><tex Notation="TeX">$\hbox{TaO}_{x}$</tex></formula>-Based Resistive Change Memory Realized With Electrode Engineering

Forming-Less Unipolar Taox-Based Rram with Large Cc-Independence Range for High Density Memory Applications

Novel bipolar TaOx-based Resistive Random Access Memory

Electrode-Induced Digital-To-Analog Resistive Switching in Taox-Based Rram Devices

Improved Uniformity of TaOx-Based Resistive Random Access Memory with Ultralow Operating Voltage by Electrodes Engineering

Uniform,fast,and Reliable CMOS Compatible Resistive Switching Memory

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Electrode-material dependent switching in TaO x memristors

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Ultralow Power Switching of Ta2O5/AlOXbilayer Synergistic Resistive Random Access Memory

Ru-Based Oxide Resistive Random Access Memory For Beol-Compatible Novel Nvm Applications

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory