Abstract:As one of the emerging memory device, Ta 2 O 5 based RRAM has shown various outstanding features, such as low power consumption, high reliability and excellent scalability. In Ta 2 O 5 RRAM, the formation and the migration of oxygen vacancies are crucial to the resistive switching characteristics, reliability and uniformity of the device. In this paper, we used the first-principle simulation to study the properties of oxygen vacancies including forming energy and migration barrier in amorphous tantalum pentoxide. The β-Ta 2 O 5 supercell was built and annealing algorithm was used for generating amorphous Ta 2 O 5 in Material Studio. The band structure and DOS of both materials were studied by Vienna Ab initio simulation program (VASP). We also calculated the formation energy and migration barrier of oxygen vacancies, and discussed the mechanism of conductive path formation in amorphous Ta 2 O 5 . Finally, we proposed a new microscopic model of resistive switching mechanism in amorphous Ta 2 O 5 RRAM device.

Formation Energy Study of Oxygen Vacancies in Undoped, Aluminum-Doped and Nitrogen-Doped Taox-Based RRAM by First Principle Simulation

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ab Initio Modeling of Oxygen-Vacancy Formation in Doped-Hfox Rram: Effects of Oxide Phases, Stoichiometry, and Dopant Concentrations

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Oxygen Vacancy Formation Accompanied by Hf Oligomer in Amorphous-HfOx-Bascd RRAM: A First Principles Study

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta<sub>2</sub>O<sub>5</sub> RRAM

Effects of Interaction Between Defects on the Uniformity of Doping HfO2-based RRAM: a First Principle Study

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Exploring the Effects of Mo Doping on Oxygen Vacancy Formation and Uniformity in HfO2- and ZrO2-Based RRAMs

Au doping effects in ZrO 2 -based resistance random access memory based on first-principles calculations

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

Study on microscopic model of resistive switching in amorphous tantalum pentoxide from first-principle calculations

Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM

Improvement of RRAM Uniformity and Analog Characteristics Through Localized Metal Doping

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Multi-scale Modeling of Oxygen Vacancies Assisted Charge Transport in Sub-Stoichiometric TiOx for RRAM Application

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Synergistic Resistive Switching Mechanism Of Oxygen Vacancies And Metal Interstitials In Ta2o5

Ab Initio Study of Oxygen Vacancy Filament Formation at Ta/HfO2 Interface