Abstract:Oxide based RRAM memories are considered as potential candidates to replace floating gate memory devices [1-2] due to their proven low power operation , high switching speed [3] and compatibility with conventional CMOS back-end-of-line process. The working principle relies on the reversible change of the oxide layer’s resistance between two levels namely HRS (High Resistance State) and LRS (Low Resistance State). This resistance change has been widely attributed to the creation/reconstruction and rupture of a localized or multiple conductive filaments (CF) in the oxide layer. Various companies [4] and research laboratories [5] have adopted the HfOx solution as the active oxide layer that casts the memory effect. However, the process of the CF creation responsible for resistive switching and the oxide layer degradation are yet to be fully explored. In this paper we use first principles calculations to investigate Frenkel-Pair formation (FP) in HfO2 that play an important role in the CF creation. Depending on the electrode nature, its work function and reactivity with oxygen, we bring more insight into the FP formation leading to CF creation and device reliability. We show that oxygen active electrodes with low work function, like Ti, improve device reliability. Finally, endurance tests on a memory cell with Ti as top electrode were performed to assess cycling stability. Endurance up to 108 cycles, with optimized set conditions has been demonstrated. [1] H. Akinaga and H. Shima, Proc. IEEE, vol. 98, p. 2237, 2010.[2] V. Sriraman et al., IPCSIT, vol. 32, p.101, 2012 [3] B. Govoreanu et al., IEDM Tech. Dig., pp. 729-732, 2011 [4] Ch. Walczyk et al., J. Vac. Sci. Technol. B 29, 01AD02 (2011) [5] Y.S.Chen et al., IEDM Tech. Dig,pp. 31.3.1 - 31.3.4,2011.

Oxygen Vacancy Formation Accompanied by Hf Oligomer in Amorphous-HfOx-Bascd RRAM: A First Principles Study

First Principle Simulations on the Effects of Oxygen Vacancy in HfO2-based RRAM

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Ab Initio Modeling of Oxygen-Vacancy Formation in Doped-Hfox Rram: Effects of Oxide Phases, Stoichiometry, and Dopant Concentrations

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

Formation Energy Study of Oxygen Vacancies in Undoped, Aluminum-Doped and Nitrogen-Doped Taox-Based RRAM by First Principle Simulation

Ab Initio Study of Oxygen Vacancy Filament Formation at Ta/HfO2 Interface

Exploring the Direction-Dependency of Conductive Filament Formation and Oxygen Vacancy Migration Behaviors in HfO2-based RRAM

Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability

Ab Initio Calculations of Materials Selection of Oxides for Resistive Random Access Memories

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Chemical Insight into Origin of Forming-Free Resistive Random-Access Memory Devices

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Metal Dopants in Hfo2-Based Rram: First Principle Study

Structural Properties and Thermodynamics of Hafnium sub-oxides in RRAM

Filament-to-dielectric band alignments in TiO_2 and HfO_2 resistive RAMs