Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

First-principles simulation of neutral and charged oxygen vacancies in m-ZrO2: An origin of filamentary type resistive switching

Formation Energy Study of Oxygen Vacancies in Undoped, Aluminum-Doped and Nitrogen-Doped Taox-Based RRAM by First Principle Simulation

Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations

Ionic Doping Effect In Zro2 Resistive Switching Memory

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Investigation of the large variability of HfO2‐based ReRAM devices with a small current compliance by a kinetic Monte Carlo model

Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process

Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles

A First-Principle Analysis of Resistive Switching Enhancement of HfO2 Thin Film Induced by Zinc Doping Method

Oxygen Vacancy Formation Accompanied by Hf Oligomer in Amorphous-HfOx-Bascd RRAM: A First Principles Study

In Situ TEM Studies of Oxygen Vacancy Migration for Electrically Induced Resistance Change Effect in Cerium Oxides.

Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices

Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications

Design of Oxygen Vacancy Configuration for Memristive Systems

Crystallographic Orientation-Dependent Resistive Switching in Ga2O3 Thin Films

Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Resistive switching mechanism of Ag/ZrO 2 :Cu/Pt memory cell