Abstract:An atomistic Monte-Carlo simulator of TaO X -based resistive random access memory (RRAM) with bi-layered Ta 2 O 5-X /TaO 2-X stack is developed by considering generation/recombination (G-R) of oxygen vacancies (V O ) with oxygen ions (O 2- ), phase transition (P-T) between Ta 2 O 5 and TaO 2 as well as interactions of Ta 2 O 5-X /TaO 2-X stack. The stack induced effects involving changeable Schottky barrier (SB) at the stack interface, the evolutions of O 2- and lattice oxygen (LO) in the stack and the self-compliance effect are also included in the simulator. Using the simulation tool, the resistive switching (RS) characteristics of the bi-layered TaO X -based RRAM can be reproduced. The impacts of different stack thicknesses, oxygen contents and capabilities to take redox reactions with O 2- of TaO 2-X layer on RS behaviors are simulated. The simulation results can be utilized to achieve controllable switching processes and optimized device performances.

Understanding the underlying physics of superior endurance in Bi-layered TaO<inf>X</inf>-RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Simulation of TaO<inf>X</inf>-RRAM with Ta<inf>2</inf>O<inf>5−X</inf>/TaO<inf>2−X</inf> stack engineering

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Simulation of TaO X -RRAM with Ta 2 O 5−X /TaO 2−X stack engineering

Investigation on High Resistance Variation of Bi-layer TaO<inf>x</inf>/HfO<inf>2</inf> RRAM Devices

Simulation of TaOX-RRAM with Ta2O5−X/TaO2−Xstack engineering

Physical mechanisms of endurance degradation in TMO-RRAM

Study on microscopic model of resistive switching in amorphous tantalum pentoxide from first-principle calculations

Analytic Model Of Endurance Degradation And Its Practical Applications For Operation Scheme Optimization In Metal Oxide Based Rram

Study of the Bipolar Resistive‐switching Behaviors in Pt/GdOx/TaNx Structure for RRAM Application

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Uniform 3d Vertical Alo Delta/Ta2o5-X/Taoy Rram: Fabrication, Characterization And Mechanism Analysis

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

In-depth Understanding of Physical Mechanism of the Gradual Switching in AlOxNy-based RRAM As Memory and Synapse Device

Effect of Oxygen Profiles on the RS Characteristics of Bilayer TaOx/TaOy Based RRAM